Enhancement of localization and confinement effects in quaternary group-III nitride multi-quantum wells on SiC substrate

2005 ◽  
Vol 202 (4) ◽  
pp. 642-646 ◽  
Author(s):  
S. Anceau ◽  
P. Lefebvre ◽  
T. Suski ◽  
L. Konczewicz ◽  
H. Hirayama ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Confinement Effects ◽  
Group Iii ◽  
Group Iii Nitride

Exciton localization in group-III nitride quantum wells

1999 ◽  
Vol 59 (15) ◽  
pp. 9783-9786 ◽  
Author(s):  
V. I. Litvinov ◽  
M. Razeghi
Keyword(s):  
Quantum Wells ◽  
Group Iii ◽  
Exciton Localization ◽  
Group Iii Nitride

6.4.3 Group III–nitride quantum wells

2013 ◽  
pp. 120-122
Author(s):  
C. Höfling ◽  
C. Schneider ◽  
A. Forchel
Keyword(s):  
Quantum Wells ◽  
Group Iii ◽  
Group Iii Nitride

Donor binding energies in group III-nitride-based quantum wells: influence of internal electric fields

2001 ◽  
Vol 82 (1-3) ◽  
pp. 221-223 ◽  
Author(s):  
A Morel ◽  
P Lefebvre ◽  
T Taliercio ◽  
M Gallart ◽  
B Gil ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Binding Energies ◽  
Group Iii ◽  
Group Iii Nitride

scholarly journals Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures

2000 ◽  
Vol 5 (S1) ◽  
pp. 957-969
Author(s):  
C. Wetzel ◽  
T. Takeuchi ◽  
H. Amano ◽  
I. Akasaki
Keyword(s):  
Quantum Wells ◽  
Reflection Spectroscopy ◽  
Polarization Effects ◽  
Group Iii ◽  
Barrier Heights ◽  
Device Applications ◽  
Important Input ◽  
Splitting Energy ◽  
Group Iii Nitride ◽  
Transport Device

Uniaxial wurtzite group-III nitride heterostructures are subject to large polarization effects with significant consequences for device physics in optoelectronic and transport device applications. A central aspect for the proper implementation is the experimental quantification of polarization charges and associated fields. In modulated reflection spectroscopy of thin films and heterostructures of AlGaInN we observe pronounced Franz-Keldysh oscillations that allow direct and accurate readings of the field strength induced by polarization dipoles at the heterointerfaces. In piezoelectric GaInN/GaN quantum wells this dipole is found to induce an asymmetry in barrier heights with a respective splitting of interband transitions. This splitting energy appears to reflect in the transitions of spontaneous and stimulated luminescence in the well. From these experiments the polarization dipole is identified as controllable type-II staggered band offset between adjacent barrier layers which can extend the flexibility in AlGaInN bandstructure design. The derived field values can serve as important input parameters in the further interpretation of the entire system.

Ultrafast carrier relaxation in group-III nitride multiple quantum wells

2004 ◽  
Author(s):  
Umit Ozgur ◽  
Henry O. Everitt ◽  
Stacia Keller ◽  
Steven P. DenBaars ◽  
Lei He ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Relaxation ◽  
Group Iii ◽  
Ultrafast Carrier ◽  
Group Iii Nitride
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