Size dependence of photoluminescence quantum efficiency of Si nanocrystals

2006 ◽  
Vol 73 (24) ◽  
Author(s):  
Satoru Miura ◽  
Toshihiro Nakamura ◽  
Minoru Fujii ◽  
Masaki Inui ◽  
Shinji Hayashi
Keyword(s):  
Quantum Efficiency ◽  
Size Dependence ◽  
Si Nanocrystals

Radiative quantum efficiency of CdSe/ZnS core-shell colloidal solutions: Size-dependence

2008 ◽  
Vol 281 (23) ◽  
pp. 5925-5928 ◽  
Author(s):  
Viviane Pilla ◽  
Leandro P. Alves ◽  
Marcos T.T. Pacheco ◽  
Egberto Munin
Keyword(s):  
Quantum Efficiency ◽  
Size Dependence ◽  
Core Shell ◽  
Colloidal Solutions ◽  
Radiative Quantum Efficiency

Pore size dependence of PtSi/Porous Si Schottky barrier detectors on quantum efficiency response

2012 ◽  
Vol 184 ◽  
pp. 119-123 ◽  
Author(s):  
Hamed Mehrara ◽  
Alireza Erfanian ◽  
Mahdi Khaje ◽  
Mohammad Zahedinejad ◽  
Farshid Raissi ◽  
...  
Keyword(s):  
Pore Size ◽  
Schottky Barrier ◽  
Quantum Efficiency ◽  
Size Dependence ◽  
Porous Si ◽  
Barrier Detectors

Photoluminescence Mechanism of Silicon Quantum Dots and Wells

1996 ◽  
Vol 452 ◽  
Author(s):  
Y. Kanemitsu ◽  
S. Okamoto
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Size Dependence ◽  
Surface Oxide Layer ◽  
Exciton Localization ◽  
Si Nanocrystals ◽  
Vibrational Excitations ◽  
Photoluminescence Mechanism ◽  
Luminescence Process ◽  
Si Quantum Dots

AbstractWe discuss the mechanism of efficient photoluminescence (PL) from Si quantum dots and wells. Luminescence properties of SiO2-capped Si nanocrystals are different from those of H-terminated Si nanocrystals, but are very similar to those of Si quantum wells sandwiched by SiO2 layers. The size-dependence of PL properties and resonantly excited PL spectra of SiCb-capped Si dots and wells indicate that excitons are localized near the interface between the crystalline Si core and surface oxide layer, and the strong coupling of electronic and vibrational excitations causes the broad PL spectrum. The exciton localization plays an essential role in the efficient luminescence process in nanoscale Si/SiO2 systems.

scholarly journals Size dependence of the bulk modulus of Si nanocrystals

Sadhana ◽  
2018 ◽  
Vol 43 (11) ◽  
Author(s):  
B J Abdullah ◽  
M S Omar ◽  
Q Jiang
Keyword(s):  
Bulk Modulus ◽  
Size Dependence ◽  
Si Nanocrystals

Size dependence of quantum efficiency of red emission from GaN:Eu structures for application in micro-LEDs

2020 ◽  
Vol 45 (14) ◽  
pp. 3973 ◽  
Author(s):  
D. Denier van der Gon ◽  
D. Timmerman ◽  
Y. Matsude ◽  
S. Ichikawa ◽  
M. Ashida ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Size Dependence ◽  
Red Emission

Size dependence of lifetime and absorption cross section of Si nanocrystals embedded in SiO2

2003 ◽  
Vol 82 (10) ◽  
pp. 1595-1597 ◽  
Author(s):  
C. Garcia ◽  
B. Garrido ◽  
P. Pellegrino ◽  
R. Ferre ◽  
J. A. Moreno ◽  
...  
Keyword(s):  
Cross Section ◽  
Absorption Cross Section ◽  
Size Dependence ◽  
Absorption Cross ◽  
Si Nanocrystals

Size dependence of the luminescence properties in Si nanocrystals

2000 ◽  
Vol 69-70 ◽  
pp. 454-458 ◽  
Author(s):  
Giorgia Franzò ◽  
Fabio Iacona ◽  
Corrado Spinella ◽  
Silvia Cammarata ◽  
Maria Grazia Grimaldi
Keyword(s):  
Size Dependence ◽  
Luminescence Properties ◽  
Si Nanocrystals
Sign in / Sign up

Export Citation Format

Share Document