scholarly journals Recombination kinetics of InAs quantum dots: Role of thermalization in dark states

2006 ◽  
Vol 73 (8) ◽  
Author(s):  
M. Gurioli ◽  
A. Vinattieri ◽  
M. Zamfirescu ◽  
M. Colocci ◽  
S. Sanguinetti ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Inas Quantum Dots ◽  
Kinetics Of ◽  
Recombination Kinetics

Exciton dark states in the recombination kinetics of InAs quantum dots

2005 ◽  
Vol 202 (14) ◽  
pp. 2604-2608 ◽  
Author(s):  
Anna Vinattieri ◽  
Marian Zamfirescu ◽  
Massimo Gurioli ◽  
Marcello Colocci ◽  
Stefano Sanguinetti ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Inas Quantum Dots ◽  
Kinetics Of ◽  
Recombination Kinetics

scholarly journals Strongly temperature-dependent recombination kinetics of a negatively charged exciton in asymmetric quantum dots at 1.55 µm

2018 ◽  
Vol 113 (4) ◽  
pp. 043103 ◽  
Author(s):  
Ł. Dusanowski ◽  
M. Gawełczyk ◽  
J. Misiewicz ◽  
S. Höfling ◽  
J. P. Reithmaier ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Temperature Dependent ◽  
Asymmetric Quantum ◽  
Charged Exciton ◽  
Kinetics Of ◽  
Recombination Kinetics ◽  
Asymmetric Quantum Dots

Role of As in the Anisotropic Positioning of Self-Assembled InAs Quantum Dots

2013 ◽  
Vol 1551 ◽  
pp. 3-9
Author(s):  
Fabrizio Arciprete ◽  
Ernesto Placidi ◽  
Rita Magri ◽  
Massimo Fanfoni ◽  
Adalberto Balzarotti ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam ◽  
High Growth ◽  
Inas Quantum Dots ◽  
Potential Applications ◽  
Gaas Buffer Layer ◽  
Image Position ◽  
Pulsed Deposition ◽  
Deposition Mode

ABSTRACTProgress in tailoring the size, shape and positioning of Quantum Dots on the substrate is crucial for their potential applications in new optoelectronic devices for nano-photonics as well as in quantum information and computation. Using Molecular Beam Epitaxy in pulsed deposition mode we demonstrate that the nucleation of InAs Quantum Dots can be selectively guided on the GaAs(001) surface by a suitable choice of the kinetic parameters for the growth of both the GaAs buffer layer and the InAs Quantum Dots. By developing a two-species rate-equation kinetic model we show that the positioning of the Quantum Dots on only one side of mounds of the GaAs buffer can be traced back to the very small As flux gradient between the two mound slopes $\left( {\Delta F_A /F_A \approx 1 - 5\% } \right)$ caused by the proper tilting of the incoming As flux. Such gradient originates, at the relatively high growth-temperature, a net cation flow from one slope of the mound to the other that is responsible for the selective growth.

The role of heavy–light-hole mixing on the optical initialization of hole spin in InAs quantum dots

2013 ◽  
Vol 25 (20) ◽  
pp. 202202 ◽  
Author(s):  
F Fras ◽  
F Bernardot ◽  
B Eble ◽  
M Bernard ◽  
B Siarry ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Hole ◽  
Inas Quantum Dots

The Unexpected Role of Arsenic in Driving the Selective Growth of InAs Quantum Dots on GaAs

ACS Nano ◽  
2013 ◽  
Vol 7 (5) ◽  
pp. 3868-3875 ◽  
Author(s):  
Fabrizio Arciprete ◽  
Ernesto Placidi ◽  
Rita Magri ◽  
Massimo Fanfoni ◽  
Adalberto Balzarotti ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Selective Growth ◽  
Inas Quantum Dots

Photoluminescence kinetics of structures with InAs quantum dots for IR photodetectors

2012 ◽  
Vol 6 (3) ◽  
pp. 505-507
Author(s):  
L. V. Gavrilenko ◽  
V. M. Danil’tsev ◽  
M. N. Drozdov ◽  
D. I. Kuritsyn ◽  
L. D. Moldavskaya
Keyword(s):  
Quantum Dots ◽  
Inas Quantum Dots ◽  
Ir Photodetectors ◽  
Kinetics Of
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