The Unexpected Role of Arsenic in Driving the Selective Growth of InAs Quantum Dots on GaAs

ACS Nano ◽  
2013 ◽  
Vol 7 (5) ◽  
pp. 3868-3875 ◽  
Author(s):  
Fabrizio Arciprete ◽  
Ernesto Placidi ◽  
Rita Magri ◽  
Massimo Fanfoni ◽  
Adalberto Balzarotti ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Selective Growth ◽  
Inas Quantum Dots

Role of As in the Anisotropic Positioning of Self-Assembled InAs Quantum Dots

2013 ◽  
Vol 1551 ◽  
pp. 3-9
Author(s):  
Fabrizio Arciprete ◽  
Ernesto Placidi ◽  
Rita Magri ◽  
Massimo Fanfoni ◽  
Adalberto Balzarotti ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam ◽  
High Growth ◽  
Inas Quantum Dots ◽  
Potential Applications ◽  
Gaas Buffer Layer ◽  
Image Position ◽  
Pulsed Deposition ◽  
Deposition Mode

ABSTRACTProgress in tailoring the size, shape and positioning of Quantum Dots on the substrate is crucial for their potential applications in new optoelectronic devices for nano-photonics as well as in quantum information and computation. Using Molecular Beam Epitaxy in pulsed deposition mode we demonstrate that the nucleation of InAs Quantum Dots can be selectively guided on the GaAs(001) surface by a suitable choice of the kinetic parameters for the growth of both the GaAs buffer layer and the InAs Quantum Dots. By developing a two-species rate-equation kinetic model we show that the positioning of the Quantum Dots on only one side of mounds of the GaAs buffer can be traced back to the very small As flux gradient between the two mound slopes $\left( {\Delta F_A /F_A \approx 1 - 5\% } \right)$ caused by the proper tilting of the incoming As flux. Such gradient originates, at the relatively high growth-temperature, a net cation flow from one slope of the mound to the other that is responsible for the selective growth.

Selective growth of InAs quantum dots using In nano-dot arrays formed by nano-jet probe method

2007 ◽  
Vol 301-302 ◽  
pp. 726-730 ◽  
Author(s):  
S. Ohkouchi ◽  
Y. Sugimoto ◽  
N. Ozaki ◽  
H. Ishikawa ◽  
K. Asakawa
Keyword(s):  
Quantum Dots ◽  
Selective Growth ◽  
Probe Method ◽  
Inas Quantum Dots

The role of heavy–light-hole mixing on the optical initialization of hole spin in InAs quantum dots

2013 ◽  
Vol 25 (20) ◽  
pp. 202202 ◽  
Author(s):  
F Fras ◽  
F Bernardot ◽  
B Eble ◽  
M Bernard ◽  
B Siarry ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Hole ◽  
Inas Quantum Dots

Selective growth of single InAs quantum dots using strain engineering

2002 ◽  
Vol 80 (2) ◽  
pp. 326-328 ◽  
Author(s):  
B. C. Lee ◽  
S. D. Lin ◽  
C. P. Lee ◽  
H. M. Lee ◽  
J. C. Wu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Strain Engineering ◽  
Selective Growth ◽  
Inas Quantum Dots

scholarly journals In situ mask designed for selective growth of InAs quantum dots in narrow regions developed for molecular beam epitaxy system

2007 ◽  
Vol 78 (7) ◽  
pp. 073908 ◽  
Author(s):  
Shunsuke Ohkouchi ◽  
Yusui Nakamura ◽  
Naoki Ikeda ◽  
Yoshimasa Sugimoto ◽  
Kiyoshi Asakawa
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Growth ◽  
Inas Quantum Dots ◽  
Molecular Beam Epitaxy System
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