Temperature and thickness driven spin-reorientation transition in amorphous Co-Fe-Ta-B thin films

2006 ◽  
Vol 73 (5) ◽  
Author(s):  
Parmanand Sharma ◽  
Hisamichi Kimura ◽  
Akihisa Inoue ◽  
Elke Arenholz ◽  
J.-H. Guo
Keyword(s):  
Thin Films ◽  
Spin Reorientation ◽  
Spin Reorientation Transition

scholarly journals Temperature induced interface roughness and spin reorientation transition in Co/Au multilayers thin films

2020 ◽  
Vol 6 (12) ◽  
pp. 126445
Author(s):  
Balaji Rakesh ◽  
Neeru Bhagat ◽  
Dileep Gupta ◽  
Mukul Gupta ◽  
Brajesh Pandey
Keyword(s):  
Thin Films ◽  
Interface Roughness ◽  
Spin Reorientation ◽  
Spin Reorientation Transition

Magnetization process of Co/Pd(111) thin films: Chemisorption-induced spin-reorientation transition

2008 ◽  
Vol 602 (11) ◽  
pp. 1999-2003 ◽  
Author(s):  
Daiju Matsumura ◽  
Takeshi Nakagawa ◽  
Hirokazu Watanabe ◽  
Hitoshi Abe ◽  
Kenta Amemiya ◽  
...  
Keyword(s):  
Thin Films ◽  
Spin Reorientation ◽  
Magnetization Process ◽  
Spin Reorientation Transition

Magnetic Domain Structure and Spin Reorientation Transition in the System Co/Au/W(110)

1997 ◽  
Vol 475 ◽  
Author(s):  
T. Duden ◽  
E. Bauer
Keyword(s):  
Thin Films ◽  
Domain Structure ◽  
Time Resolution ◽  
Magnetic Domain ◽  
Spin Reorientation ◽  
High Time Resolution ◽  
Spin Reorientation Transition ◽  
In Situ Experiments ◽  
Out Of Plane

ABSTRACTUltrathin epitaxial Co layers grown on Au(111) show strong perpendicular magnetic aniso-tropy resulting in out-of-plane magnetization in thin films. With increasing Co thickness the increasing contribution of the shape anisotropy leads to a reorientation transition of the magnetization which has already been subject of many other studies. In the dynamic in-situ experiments reported here bulk Au(111) is replaced by epitaxially grown Au(111)/W(110). The high time resolution (0.05 ML Co deposition per acquisition cycle) allows to extract several mechanisms which occur during the spin reorientation transition.

Stripe domains and spin reorientation transition in Fe78B13Si9 thin films produced by rf sputtering

2008 ◽  
Vol 104 (3) ◽  
pp. 033902 ◽  
Author(s):  
Marco Coïsson ◽  
Federica Celegato ◽  
Elena Olivetti ◽  
Paola Tiberto ◽  
Franco Vinai ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Spin Reorientation ◽  
Spin Reorientation Transition

Spin Reorientation Transition and Magnetization Reversal Mechanism of Gd Doped FeCo High-Frequency Soft Magnetic Thin Films

2014 ◽  
Vol 924 ◽  
pp. 141-151 ◽  
Author(s):  
Yu Rong An ◽  
Yue Li ◽  
Zhen Wang ◽  
Ya Lu Zuo ◽  
Li Xi
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Magnetization Reversal ◽  
High Frequency ◽  
Uniaxial Anisotropy ◽  
Spin Reorientation ◽  
Spin Reorientation Transition ◽  
Sputtering Power ◽  
Deposition Power ◽  
Reversal Mechanism

The magnetic FeCoGd thin films with various sputtering power from 10 to 30 W were fabricated on glass substrates by magnetron co-sputtering. The crystal structure of as-deposited FeCoGd thin films was investigated by X-ray diffraction. And an increasing trend of grain size with the increasing sputtering power was shown. When sputtering power is below 30 W, the films exhibited obviously in-plane uniaxial magnetic anisotropy, and the in-plane magnetic anisotropy field Hkdecreased with increasing deposition power. Moreover, good high frequency characteristics were obtained. The magnetization reversal mechanism has been investigated via the in-plane angular dependences of the magnetization and the coercivity. The experimental data points indicated that the magnetization reversal mechanism of FeCoGd film with in-plane uniaxial anisotropy is domain-wall depinning and coherent rotation when the applied field is close to the easy axis and hard axis, respectively. A spin reorientation transition phenomenon was observed when deposition power is larger than 30 W. A stripe domain structure for the sample with 30 W deposition power was developed due to a dominated perpendicular magnetic anisotropy.

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