Irreversible island growth in the presence of anisotropic surface diffusion with long jumps

2005 ◽  
Vol 72 (11) ◽  
Author(s):  
P. Alex Greaney ◽  
D. C. Chrzan
Keyword(s):  
Surface Diffusion ◽  
Island Growth ◽  
Anisotropic Surface

Microstructural Evolution and Coherent Islands

1992 ◽  
Vol 280 ◽  
Author(s):  
Jeff Drucker
Keyword(s):  
Growth Rate ◽  
Surface Diffusion ◽  
Microstructural Evolution ◽  
Rigid Substrate ◽  
Island Growth ◽  
Equilibrium Solubility

ABSTRACTMicrostructural evolution in systems containing strained islands (coherent, incoherent or both) is investigated. The growth rate of an individual island coarsening in an ensemble of strained islands is obtained by including elastic effects on surface diffusion of adatoms to and the equilibrium solubility of strained islands. For strained islands growing on a quasi-rigid substrate, coherent islands grow more slowly than incoherent islands of the same radius. Consequently, the island growth rate accelerates at the coherent to incoherent transition. The model agrees with recent experimental observations in Ge/Si(100) heteroepitaxy.

Anisotropic surface diffusion of CO on Ni(110)

1991 ◽  
Vol 66 (18) ◽  
pp. 2352-2355 ◽  
Author(s):  
Xu-Dong Xiao ◽  
X. D. Zhu ◽  
W. Daum ◽  
Y. R. Shen
Keyword(s):  
Surface Diffusion ◽  
Anisotropic Surface

Mechanism of hole inlet closure in shape transformation of hole arrays on Si(001) substrates by hydrogen annealing

2011 ◽  
Vol 1299 ◽  
Author(s):  
Reiko Hiruta ◽  
Hitoshi Kuribayashi ◽  
Koichi Sudoh ◽  
Ryosuke Shimizu
Keyword(s):  
Surface Diffusion ◽  
Mirror Symmetry ◽  
Morphological Evolution ◽  
Shape Transformation ◽  
Force Microscopy ◽  
Anisotropic Surface ◽  
Atomic Force ◽  
Hole Arrays ◽  
Top View ◽  
Anisotropic Surface Energy

ABSTRACTWe investigated the process of the hole inlet closure in surface-diffusion-driven transformation of arrays of high-aspect-ratio holes on Si(001) substrates. The inlet gradually shrinks while keeping the circular shape because of lateral bulging of the inlet surface. We observed complicated top view morphologies reflecting the four-fold symmetry of the Si(001) surface on the inlet surface. Large {111} and {113} facets are formed in the four equivalent azimuths of the [110], while corrugated patterns arise in the four equivalent azimuths of the [100]. Atomic force microscopy observations reveal that the corrugated pattern is composed of three types of small facets, namely, {110} and two {113} in relation of the mirror symmetry. The corrugated pattern formation is due to the geometrical restriction that there is no stable facet between (001) and (010) in the [010] azimuth. The observed morphological evolution is interpreted as surface-diffusion-driven transformation under constraint of the anisotropic surface energy of Si.

“Enhanced Layer Coverage of Thin Films by Oblique Angle Deposition”

2004 ◽  
Vol 859 ◽  
Author(s):  
Tansel Karabacak ◽  
Gwo-Ching Wang ◽  
Toh-Ming Lu
Keyword(s):  
Thin Films ◽  
Surface Diffusion ◽  
Kinetic Monte Carlo ◽  
Monte Carlo Algorithm ◽  
Oblique Angle Deposition ◽  
Oblique Angle ◽  
Island Growth ◽  
Average Growth ◽  
Substrate Rotation ◽  
Angle Deposition

ABSTRACTThe characteristics of nucleation and island growth in oblique angle deposition with substrate rotation have recently attracted interest due to the formation of novel 3D nanostructures by a physical self-assembly process. In this study, we present the results of a solid-on-solid growth simulation by a kinetic Monte Carlo algorithm that explores the layer coverage evolution of thin films during oblique angle deposition. The simulations accounted for oblique incidence flux, shadowing effect, surface diffusion, and substrate rotation. The layer coverage, the ratio of average island volume to average island size, and root-mean-square (RMS) roughness values are reported for the initial stages of island growth from submonolayer thicknesses up to a few monolayers. RMS roughness was also investigated for later stages of the growth. Our results show that, for small deposition angles and with limited or no surface diffusion included, the average growth rate of islands is faster in lateral directions that results in enhanced layer coverages and smoother films. This is due to that the sides of the islands can be exposed to the incident flux more effectively at small deposition angles. On the other hand, normal incidence and high oblique angle depositions give poorer layer coverages and much rougher films due to the slower growth rates in lateral directions.

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