Tunneling spin polarization in magnetic tunnel junctions near the Curie temperature

2005 ◽  
Vol 72 (10) ◽  
Author(s):  
A. T. Hindmarch ◽  
C. H. Marrows ◽  
B. J. Hickey
Science ◽  
1999 ◽  
Vol 286 (5439) ◽  
pp. 507-509 ◽  
Author(s):  
Jose Maria De Teresa ◽  
Agnès Barthélémy ◽  
Albert Fert ◽  
Jean Pierre Contour ◽  
François Montaigne ◽  
...  

The role of the metal-oxide interface in determining the spin polarization of electrons tunneling from or into ferromagnetic transition metals in magnetic tunnel junctions is reported. The spin polarization of cobalt in tunnel junctions with an alumina barrier is positive, but it is negative when the barrier is strontium titanate or cerium lanthanite. The results are ascribed to bonding effects at the transition metal–barrier interface. The influence of the electronic structure of metal-oxide interfaces on the spin polarization raises interesting fundamental problems and opens new ways to optimize the magnetoresistance of tunnel junctions.


2007 ◽  
Vol 75 (17) ◽  
Author(s):  
N. N. Beletskii ◽  
G. P. Berman ◽  
A. R. Bishop ◽  
S. A. Borysenko ◽  
V. M. Yakovenko

2010 ◽  
Vol 107 (9) ◽  
pp. 093913 ◽  
Author(s):  
Kyoung-Il Lee ◽  
Jong Wook Roh ◽  
Kiyoung Lee ◽  
Joonyeon Chang ◽  
Kyung-Ho Shin ◽  
...  

2004 ◽  
Vol 85 (17) ◽  
pp. 3803-3805 ◽  
Author(s):  
N. D. Telling ◽  
G. van der Laan ◽  
S. Ladak ◽  
R. J. Hicken

2008 ◽  
Vol 22 (26) ◽  
pp. 2529-2551 ◽  
Author(s):  
ATHANASIOS N. CHANTIS ◽  
KIRILL D. BELASHCHENKO ◽  
EVGENY Y. TSYMBAL ◽  
INNA V. SUS

In this article we give a review of our recent theoretical studies of the influence of Fe (001) surface (interface) states on spin-polarized electron transport across magnetic tunnel junctions with Fe electrodes. We show that minority-spin surface (interface) states are responsible for at least two effects which are important for spin electronics. First, they can produce a sizable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single Fe electrode. The effect is driven by a Rashba shift of the resonant surface band when the magnetization changes direction. This can introduce a new class of spintronic devices, namely, tunneling magnetoresistance junctions with a single ferromagnetic electrode. Second, in Fe/GaAs (001) magnetic tunnel junctions minority-spin interface states produce a strong dependence of the tunneling current spin polarization on applied electrical bias. A dramatic sign reversal within a voltage range of just a few tenths of an eV is predicted. This explains the observed sign reversal of spin polarization in recent experiments of electrical spin injection in Fe/GaAs (001) and related reversal of tunneling magnetoresistance through vertical Fe/GaAs/Fe trilayers.


2005 ◽  
Vol 87 (23) ◽  
pp. 232502 ◽  
Author(s):  
Zhitao Diao ◽  
Dmytro Apalkov ◽  
Mahendra Pakala ◽  
Yunfei Ding ◽  
Alex Panchula ◽  
...  

2003 ◽  
Vol 83 (9) ◽  
pp. 1812-1814 ◽  
Author(s):  
Alex F. Panchula ◽  
Christian Kaiser ◽  
Andrew Kellock ◽  
Stuart S. P. Parkin

1989 ◽  
Vol 151 ◽  
Author(s):  
Xin Hao ◽  
J. S. Moodera ◽  
R. Meservey

ABSTRACTSpin-resolved tunneling in the structure metal-EuS-metal has been obtained. The metal electrodes used in our experiments being non-magnetic, polarization of the tunnel current is attributed to the conduction band splitting in EuS below its ferromagnetic Curie temperature. Enhanced Zeeman splitting in the superconducting aluminum film is also observed.


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