Spin polarization decay in magnetic tunnel junctions with semimetal-inserted layers

2010 ◽  
Vol 107 (9) ◽  
pp. 093913 ◽  
Author(s):  
Kyoung-Il Lee ◽  
Jong Wook Roh ◽  
Kiyoung Lee ◽  
Joonyeon Chang ◽  
Kyung-Ho Shin ◽  
...  
Keyword(s):  
Spin Polarization ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions

Role of Metal-Oxide Interface in Determining the Spin Polarization of Magnetic Tunnel Junctions

Science ◽  
1999 ◽  
Vol 286 (5439) ◽  
pp. 507-509 ◽  
Author(s):  
Jose Maria De Teresa ◽  
Agnès Barthélémy ◽  
Albert Fert ◽  
Jean Pierre Contour ◽  
François Montaigne ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Metal Oxide ◽  
Spin Polarization ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Ferromagnetic Transition ◽  
Oxide Interface ◽  
Oxide Interfaces ◽  
Structure Of Metal

The role of the metal-oxide interface in determining the spin polarization of electrons tunneling from or into ferromagnetic transition metals in magnetic tunnel junctions is reported. The spin polarization of cobalt in tunnel junctions with an alumina barrier is positive, but it is negative when the barrier is strontium titanate or cerium lanthanite. The results are ascribed to bonding effects at the transition metal–barrier interface. The influence of the electronic structure of metal-oxide interfaces on the spin polarization raises interesting fundamental problems and opens new ways to optimize the magnetoresistance of tunnel junctions.

Magnetoresistance and spin polarization of electron current in magnetic tunnel junctions

2007 ◽  
Vol 75 (17) ◽  
Author(s):  
N. N. Beletskii ◽  
G. P. Berman ◽  
A. R. Bishop ◽  
S. A. Borysenko ◽  
V. M. Yakovenko
Keyword(s):  
Spin Polarization ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Electron Current

scholarly journals Spin polarization and barrier-oxidation effects at the Co∕alumina interface in magnetic tunnel junctions

2004 ◽  
Vol 85 (17) ◽  
pp. 3803-3805 ◽  
Author(s):  
N. D. Telling ◽  
G. van der Laan ◽  
S. Ladak ◽  
R. J. Hicken
Keyword(s):  
Spin Polarization ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions

scholarly journals THE IMPORTANCE OF Fe SURFACE STATES FOR MAGNETIC TUNNEL JUNCTION BASED SPINTRONIC DEVICES

2008 ◽  
Vol 22 (26) ◽  
pp. 2529-2551 ◽  
Author(s):  
ATHANASIOS N. CHANTIS ◽  
KIRILL D. BELASHCHENKO ◽  
EVGENY Y. TSYMBAL ◽  
INNA V. SUS
Keyword(s):  
Spin Polarization ◽  
Tunnel Junctions ◽  
Strong Dependence ◽  
Magnetic Tunnel Junctions ◽  
Interface States ◽  
Tunneling Magnetoresistance ◽  
Sign Reversal ◽  
Spintronic Devices ◽  
Spin Electronics ◽  
Minority Spin

In this article we give a review of our recent theoretical studies of the influence of Fe (001) surface (interface) states on spin-polarized electron transport across magnetic tunnel junctions with Fe electrodes. We show that minority-spin surface (interface) states are responsible for at least two effects which are important for spin electronics. First, they can produce a sizable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single Fe electrode. The effect is driven by a Rashba shift of the resonant surface band when the magnetization changes direction. This can introduce a new class of spintronic devices, namely, tunneling magnetoresistance junctions with a single ferromagnetic electrode. Second, in Fe/GaAs (001) magnetic tunnel junctions minority-spin interface states produce a strong dependence of the tunneling current spin polarization on applied electrical bias. A dramatic sign reversal within a voltage range of just a few tenths of an eV is predicted. This explains the observed sign reversal of spin polarization in recent experiments of electrical spin injection in Fe/GaAs (001) and related reversal of tunneling magnetoresistance through vertical Fe/GaAs/Fe trilayers.

scholarly journals Spin transfer switching and spin polarization in magnetic tunnel junctions with MgO and AlOx barriers

2005 ◽  
Vol 87 (23) ◽  
pp. 232502 ◽  
Author(s):  
Zhitao Diao ◽  
Dmytro Apalkov ◽  
Mahendra Pakala ◽  
Yunfei Ding ◽  
Alex Panchula ◽  
...  
Keyword(s):  
Spin Polarization ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Transfer

Spin polarization and magnetotransport of Mn–Sb alloys in magnetic tunnel junctions

2003 ◽  
Vol 83 (9) ◽  
pp. 1812-1814 ◽  
Author(s):  
Alex F. Panchula ◽  
Christian Kaiser ◽  
Andrew Kellock ◽  
Stuart S. P. Parkin
Keyword(s):  
Spin Polarization ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions

Atom-Rich and Defect Effects on Electronic Structure and Magnetism in Co2MnGe/MgO Heterojunction

2013 ◽  
Vol 275-277 ◽  
pp. 1838-1842
Author(s):  
Feng Cai ◽  
Bo Wu ◽  
Yu Feng ◽  
Ying Chen ◽  
Hong Kuan Yuan ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Spin Polarization ◽  
First Principles ◽  
Heusler Alloy ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Half Metallicity ◽  
Tunnel Magnetoresistance ◽  
Full Heusler

We investigated the atomic rich and defect effects on the half-metallicity of the full-Heusler alloy Co2MnGe from the first principles. Our results show that both Mn-rich and Co-rich could increase the tunnel magnetoresistance (TMR) of the Co2MnGe/MgO magnetic tunnel junctions (MTJs). As for defect, all of investigated Co, Mn and Ge defect show that the spin polarization at Efand the TMR in the MTJs with Co and Mn defect is significatively decreased except for Ge-defected MTJs.

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