Cubic boron nitride thin film growth by boron and nitrogen ion implantation

2005 ◽  
Vol 72 (5) ◽  
Author(s):  
S. Eyhusen ◽  
C. Ronning ◽  
H. Hofsäss
Keyword(s):  
Thin Film ◽  
Boron Nitride ◽  
Ion Implantation ◽  
Film Growth ◽  
Cubic Boron Nitride ◽  
Thin Film Growth ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion

Extension of the cubic boron nitride thin film growth phase diagram

2012 ◽  
Vol 22 ◽  
pp. 88-91 ◽  
Author(s):  
S. Weidner ◽  
S. Geburt ◽  
S. Milz ◽  
J. Ye ◽  
S. Ulrich ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Diagram ◽  
Boron Nitride ◽  
Growth Phase ◽  
Film Growth ◽  
Cubic Boron Nitride ◽  
Thin Film Growth

Real-time strain monitoring in thin film growth: cubic boron nitride on Si (100)

1999 ◽  
Vol 66 (1-3) ◽  
pp. 79-82 ◽  
Author(s):  
Dmitri Litvinov ◽  
Roy Clarke ◽  
Charles A Taylor II ◽  
Darryl Barlett
Keyword(s):  
Thin Film ◽  
Boron Nitride ◽  
Real Time ◽  
Film Growth ◽  
Cubic Boron Nitride ◽  
Thin Film Growth ◽  
Strain Monitoring

Ellipsometric study of boron nitride thin‐film growth on Si(100)

1993 ◽  
Vol 62 (15) ◽  
pp. 1760-1762 ◽  
Author(s):  
S. L. Ren ◽  
A. M. Rao ◽  
P. C. Eklund ◽  
G. L. Doll
Keyword(s):  
Thin Film ◽  
Boron Nitride ◽  
Film Growth ◽  
Thin Film Growth ◽  
Ellipsometric Study

Real Time Ellipsometric Study of Boron Nitride Thin Film Growth

1995 ◽  
Vol 410 ◽  
Author(s):  
E. Bertran ◽  
A. Canillas ◽  
J. Campmany ◽  
M. El Kasmi ◽  
E. Pascual ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Boron Nitride ◽  
Real Time ◽  
Film Growth ◽  
Thin Film Growth ◽  
Si Substrates ◽  
Rf Glow Discharge

ABSTRACTWe present an in situ study of the growth of boron nitride thin films by real time ellipsometry. Films were produced in a PECVD reactor by rf glow discharge decomposition of ammonia (pure) and diborane (1% in hydrogen), on Ni-Cr coated c-Si substrates placed either on the powered electrode or on the grounded electrode of the reactor. A fast phase-modulated ellipsometer performed the real time monitoring of the growth processes at 350 nm. The ellipsometric angle trayectories were obtained through an autocalibrated method, especially suitable for the in situ optical analysis of transparent thin films. We applied several thin film growth optical models (homogeneous, two-layer, surface roughness) to analyze parameters of the films such as refractive index, extinction coefficient, roughness and deposition rate. In all the cases studied, the two-layer model fits well with the ellipsometric measurements, but a more sofisticated model considering a variable refractive index could better describe these films.

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