Island-size distribution and capture numbers in three-dimensional nucleation: Comparison with mean-field behavior

2005 ◽  
Vol 71 (24) ◽  
Author(s):  
Feng Shi ◽  
Yunsic Shim ◽  
Jacques G. Amar
Keyword(s):  
Size Distribution ◽  
Mean Field ◽  
Three Dimensional ◽  
Island Size ◽  
Field Behavior

Spatial Correlations in Growing Films

2000 ◽  
Vol 619 ◽  
Author(s):  
M.C. Bartelt
Keyword(s):  
Size Distribution ◽  
Lattice Gas ◽  
Mean Field ◽  
Film Deposition ◽  
Nucleation Theory ◽  
Spatial Correlations ◽  
Island Size ◽  
Pit Formation ◽  
Free Region ◽  
Lattice Gas Models

ABSTRACTDetailed analyses of non-equilibrium lattice-gas models of island nucleation and growth during film deposition (or etching) have been invaluable in elucidating basic issues in nucleation theory, deviations from mean-field predictions, and experimental observations. Particularly interesting and useful is the behavior of spatial correlations in the adlayer which develop during island (or pit) formation. In particular, a strong depletion in the population of island pairs at separations smaller than the average follows from depletion in the density of diffusing adspecies near islands. This feature delays percolation of clusters of coalesced islands. Another recently discovered and more subtle feature is a strong correlation between the width of the island-free region surrounding an island and the size and growth rate of that island. This direct correlation between island sizes and separations controls the shape of the island size distribution. If incorporated into rate-equation descriptions, it recovers the exact form of the scaling function for the island size distribution.

scholarly journals The Mean-field Behavior of Processor Sharing Systems with General Job Lengths Under the SQ(d) Policy

2019 ◽  
Vol 46 (3) ◽  
pp. 54-55
Author(s):  
Thirupathaiah Vasantam ◽  
Arpan Mukhopadhyay ◽  
Ravi R. Mazumdar
Keyword(s):  
Mean Field ◽  
Processor Sharing ◽  
Field Behavior ◽  
The Mean

Effect Of Phosphorus On Ge/Si(001) Island Formation

2002 ◽  
Vol 737 ◽  
Author(s):  
Theodore I. Kamins ◽  
Gilberto Medeiros-Ribeiro ◽  
Douglas A. A. Ohlberg ◽  
R. Stanley Williams
Keyword(s):  
Deposition Rate ◽  
Strain Energy ◽  
Competitive Adsorption ◽  
Lattice Mismatch ◽  
Three Dimensional ◽  
Deposition Process ◽  
Thin Layers ◽  
Island Size ◽  
Partial Pressures ◽  
Intermediate Size

ABSTRACTWhen Ge is deposited epitaxially on Si, the strain energy from the lattice mismatch causes the Ge in layers thicker than about four monolayers to form distinctive, three-dimensional islands. The shape of the islands is determined by the energies of the surface facets, facet edges, and interfaces. When phosphorus is added during the deposition, the surface energies change, modifying the island shapes and sizes, as well as the deposition process. When phosphine is introduced to the germane/hydrogen ambient during Ge deposition, the deposition rate decreases because of competitive adsorption. The steady-state deposition rate is not reached for thin layers. The deposited, doped layers contain three different island shapes, as do undoped layers; however, the island size for each shape is smaller for the doped layers than for the corresponding undoped layers. The intermediate-size islands are the most significant; the intermediate-size doped islands are of the same family as the undoped, multifaceted “dome” structures, but are considerably smaller. The largest doped islands appear to be related to the defective “superdomes” discussed for undoped islands. The distribution between the different island shapes depends on the phosphine partial pressure. At higher partial pressures, the smaller structures are absent. Phosphorus appears to act as a mild surfactant, suppressing small islands.

scholarly journals Mean Field Analysis of Orientation Selective Grain Growth Driven By Interface-Energy Anisotropy

1994 ◽  
Vol 343 ◽  
Author(s):  
J. A. Floro ◽  
C. V. Thompson
Keyword(s):  
Grain Size ◽  
Size Distribution ◽  
Grain Growth ◽  
Texture Evolution ◽  
Mean Field ◽  
Orientation Distribution ◽  
Interface Energy ◽  
Abnormal Grain Growth ◽  
Field Analysis ◽  
Energy Anisotropy

ABSTRACTAbnormal grain growth is characterized by the lack of a steady state grain size distribution. In extreme cases the size distribution becomes transiently bimodal, with a few grains growing much larger than the average size. This is known as secondary grain growth. In polycrystalline thin films, the surface energy γs and film/substrate interfacial energy γi vary with grain orientation, providing an orientation-selective driving force that can lead to abnormal grain growth. We employ a mean field analysis that incorporates the effect of interface energy anisotropy to predict the evolution of the grain size/orientation distribution. While abnormal grain growth and texture evolution always result when interface energy anisotropy is present, whether secondary grain growth occurs will depend sensitively on the details of the orientation dependence of γi.

scholarly journals Non-Mean-Field Behavior of Realistic Spin Glasses

1996 ◽  
Vol 76 (3) ◽  
pp. 515-518 ◽  
Author(s):  
C. M. Newman ◽  
D. L. Stein
Keyword(s):  
Spin Glasses ◽  
Mean Field ◽  
Field Behavior
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