Structural TEM study of nonpolara-plane gallium nitride grown on(112¯0)4H-SiC by organometallic vapor phase epitaxy
Keyword(s):
Keyword(s):
1996 ◽
Keyword(s):
1999 ◽
Vol 273-274
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pp. 770-773
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1994 ◽
Vol 23
(2)
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pp. 159-166
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1991 ◽
Vol 30
(Part 2, No. 3B)
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pp. L507-L510
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