Influence of point-defect scattering on the lattice thermal conductivity of solid solutionCo(Sb1−xAsx)3

2005 ◽  
Vol 71 (23) ◽  
Author(s):  
Zhenhua Zhou ◽  
Ctirad Uher ◽  
April Jewell ◽  
Thierry Caillat
Keyword(s):  
Thermal Conductivity ◽  
Point Defect ◽  
Lattice Thermal Conductivity

Vacancy and anti-site disorder scattering in AgBiSe2 thermoelectrics

2017 ◽  
Vol 46 (12) ◽  
pp. 3906-3914 ◽  
Author(s):  
Felix Böcher ◽  
Sean P. Culver ◽  
Jan Peilstöcker ◽  
Kai S. Weldert ◽  
Wolfgang G. Zeier
Keyword(s):  
Thermal Conductivity ◽  
Point Defect ◽  
Lattice Thermal Conductivity ◽  
Site Disorder ◽  
Disorder Scattering

Ag vacancies in AgBiSe2 influence Ag–Bi anti-site disorder and provide point defect scattering, reducing the lattice thermal conductivity.

scholarly journals Correction to Extremely Low Lattice Thermal Conductivity and Point Defect Scattering of Phonons in Ag-doped (SnSe)1–x(SnS)x Compounds

2017 ◽  
Vol 29 (22) ◽  
pp. 9859-9859
Author(s):  
Chan-Chieh Lin ◽  
Lydia Rathnam ◽  
Jae Hyun Yun ◽  
Ho Seong Lee ◽  
Jong-Soo Rhyee
Keyword(s):  
Thermal Conductivity ◽  
Point Defect ◽  
Lattice Thermal Conductivity

Effect of Te substitution on crystal structure and transport properties of AgBiSe2thermoelectric material

2018 ◽  
Vol 47 (8) ◽  
pp. 2575-2580 ◽  
Author(s):  
Y. Goto ◽  
A. Nishida ◽  
H. Nishiate ◽  
M. Murata ◽  
C. H. Lee ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thermal Conductivity ◽  
Transport Properties ◽  
Point Defect ◽  
Lattice Thermal Conductivity ◽  
Scattering Model

Reduced lattice thermal conductivity of Te-substituted AgBiSe2was qualitatively described using the point defect scattering model.

scholarly journals Co-regulation of the copper vacancy concentration and point defects leading to the enhanced thermoelectric performance of Cu3In5Te9-based chalcogenides

RSC Advances ◽  
2019 ◽  
Vol 9 (54) ◽  
pp. 31747-31752 ◽  
Author(s):  
Min Li ◽  
Yong Luo ◽  
Xiaojuan Hu ◽  
Zhongkang Han ◽  
Xianglian Liu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Point Defect ◽  
Carrier Concentration ◽  
Point Defects ◽  
Lattice Thermal Conductivity ◽  
Vacancy Concentration ◽  
Thermoelectric Performance ◽  
High Carrier Concentration ◽  
High Carrier

Co-regulation of both the copper vacancy concentration (Vc) and point defect GaIn realizing the high carrier concentration and low lattice thermal conductivity in Cu3In5Te9-based chalcogenides simultaneously.

Extremely Low Lattice Thermal Conductivity and Point Defect Scattering of Phonons in Ag-doped (SnSe)1–x(SnS)x Compounds

2017 ◽  
Vol 29 (12) ◽  
pp. 5344-5352 ◽  
Author(s):  
Chan-Chieh Lin ◽  
R. Lydia ◽  
Jae Hyun Yun ◽  
Ho Seong Lee ◽  
Jong Soo Rhyee
Keyword(s):  
Thermal Conductivity ◽  
Point Defect ◽  
Lattice Thermal Conductivity

Lattice Thermal Conductivity Modelling of a Diatomic Nanoscale Material

2020 ◽  
Vol 10 (5) ◽  
pp. 602-609
Author(s):  
Adil H. Awad
Keyword(s):  
Thermal Conductivity ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Correction Term ◽  
Nanoscale Material ◽  
New Approach ◽  
Two Samples ◽  
Conductivity Modelling ◽  
Callaway Model

Introduction: A new approach for expressing the lattice thermal conductivity of diatomic nanoscale materials is developed. Methods: The lattice thermal conductivity of two samples of GaAs nanobeam at 4-100K is calculated on the basis of monatomic dispersion relation. Phonons are scattered by nanobeam boundaries, point defects and other phonons via normal and Umklapp processes. Methods: A comparative study of the results of the present analysis and those obtained using Callaway formula is performed. We clearly demonstrate the importance of the utilised scattering mechanisms in lattice thermal conductivity by addressing the separate role of the phonon scattering relaxation rate. The formulas derived from the correction term are also presented, and their difference from Callaway model is evident. Furthermore their percentage contribution is sufficiently small to be neglected in calculating lattice thermal conductivity. Conclusion: Our model is successfully used to correlate the predicted lattice thermal conductivity with that of the experimental observation.

scholarly journals Local ferroelectric polarization switching driven by nanoscale distortions in thermoelectric $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aastha Vasdev ◽  
Moinak Dutta ◽  
Shivam Mishra ◽  
Veerpal Kaur ◽  
Harleen Kaur ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Lattice Thermal Conductivity ◽  
Direct Evidence ◽  
Temperature Dependent ◽  
Force Microscopy ◽  
Ferroelectric Domains ◽  
Pdf Analysis ◽  
Ferroelectric Transition Temperature

AbstractA remarkable decrease in the lattice thermal conductivity and enhancement of thermoelectric figure of merit were recently observed in rock-salt cubic SnTe, when doped with germanium (Ge). Primarily, based on theoretical analysis, the decrease in lattice thermal conductivity was attributed to local ferroelectric fluctuations induced softening of the optical phonons which may strongly scatter the heat carrying acoustic phonons. Although the previous structural analysis indicated that the local ferroelectric transition temperature would be near room temperature in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te , a direct evidence of local ferroelectricity remained elusive. Here we report a direct evidence of local nanoscale ferroelectric domains and their switching in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te using piezoeresponse force microscopy(PFM) and switching spectroscopy over a range of temperatures near the room temperature. From temperature dependent (250–300 K) synchrotron X-ray pair distribution function (PDF) analysis, we show the presence of local off-centering distortion of Ge along the rhombohedral direction in global cubic $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te . The length scale of the $${\text {Ge}}^{2+}$$ Ge 2 + off-centering is 0.25–0.10 Å near the room temperatures (250–300 K). This local emphatic behaviour of cation is the cause for the observed local ferroelectric instability, thereby low lattice thermal conductivity in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te .

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