The ultimate goal of making atomically thin electronic devices stimulates intensive research on layered materials, in particular the group-VI transition metal dichalcogenides (TMDs).
“Bottom-up’’ synthetic methods have the potential to produce high quality TMD nanostructures with controllable properties such as size, phase, morphology, and at low-cost.
Group VI transition metal dichalcogenides as antifouling transducers for electrochemical oxidation of catechol-containing structures