The scheme illustrates a monolayer transition-metal dichalcogenide on an epsilon-near-zero substrate. The substrate near-zero dielectric constant is used as the enhancement mechanism to maximize the SHG nonlinear effect on monolayer 2D materials.
The ultimate goal of making atomically thin electronic devices stimulates intensive research on layered materials, in particular the group-VI transition metal dichalcogenides (TMDs).
“Bottom-up’’ synthetic methods have the potential to produce high quality TMD nanostructures with controllable properties such as size, phase, morphology, and at low-cost.
Optical harmonic generation in monolayer group-VI transition metal dichalcogenides