Temperature and bias-voltage dependent transport in magnetic tunnel junctions with low energy Ar-ion irradiated barriers

2003 ◽  
Vol 68 (22) ◽  
Author(s):  
J. Schmalhorst ◽  
G. Reiss
Keyword(s):  
Bias Voltage ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Low Energy ◽  
Voltage Dependent ◽  
Dependent Transport

Bias voltage effect on tunnel magnetoresistance in fully epitaxial MgO double-barrier magnetic tunnel junctions

2005 ◽  
Vol 86 (8) ◽  
pp. 082501 ◽  
Author(s):  
T. Nozaki ◽  
A. Hirohata ◽  
N. Tezuka ◽  
S. Sugimoto ◽  
K. Inomata
Keyword(s):  
Bias Voltage ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Double Barrier ◽  
Tunnel Magnetoresistance

Magnetic tunneling junctions based on 2D CrI3 and CrBr3: spin filtering effects and high tunnel magnetoresistance via energy band difference

2021 ◽  
Author(s):  
Li Liu ◽  
Shizhuo Ye ◽  
Jin He ◽  
Qijun Huang ◽  
Hao Wang ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Differential Resistance ◽  
High Tunnel ◽  
Voltage Range ◽  
Negative Differential Resistance Effect ◽  
Magnetoresistance Ratio ◽  
Spin Filtering

Abstract Recently, the study on two-dimensional materials expands to the field of spintronics. The intrinsically ferromagnetic van der Waals materials such as CrI3 and CrBr3 receive much attention due to nearly 100% spin polarization and good stability, resulting in excellent performance in magnetic tunnel junctions. In this work, we design the magnetic tunnel junctions of Cu/CrI3/Cu and Cu/CrBr3/Cu with the electrodes of Cu(111) and the tunneling barrier of 4-monolayer CrI3 or CrBr3. Our first-principle calculations combined with nonequilibrium Green’s function method indicate that the CrBr3-based MTJ has a larger maximum tunneling magnetoresistance ratio than the CrI3-based MTJ. In a wide bias voltage range, the CrI3-based MTJ can maintain high spin filtering performance, while that of the CrBr3-based MTJ degrades sharply as the bias voltage increases. It is noted that negative differential resistance effect is observed in the CrBr3-based MTJ. The differences of spin transport properties between the CrI3-based MTJ and the CrBr3-based MTJ are clarified in terms of the inside device physics, including the spin-dependent projected density of states, band structures, Bloch states, and the electron density difference. This work provides some physical insights for the design of 2D van der Waals MTJ.

scholarly journals Spin-Dependent Transport in van der Waals Magnetic Tunnel Junctions with Fe3GeTe2 Electrodes

Nano Letters ◽  
2019 ◽  
Vol 19 (8) ◽  
pp. 5133-5139 ◽  
Author(s):  
Xinlu Li ◽  
Jing-Tao Lü ◽  
Jia Zhang ◽  
Long You ◽  
Yurong Su ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Spin Dependent Transport ◽  
Dependent Transport

Tunneling magnetoresistance and light modulation in Fe4N(La2/3Sr1/3MnO3)/C60/Fe4N single molecule magnetic tunnel junctions

2020 ◽  
Vol 8 (9) ◽  
pp. 3137-3146 ◽  
Author(s):  
Xuefei Han ◽  
Wenbo Mi ◽  
Dunhui Wang
Keyword(s):  
Transport Properties ◽  
Single Molecule ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Light Modulation ◽  
Spin Dependent Transport ◽  
Dependent Transport

Spin-dependent transport properties and light modulation of Fe4N/C60/Fe4N and LSMO/C60/Fe4N single molecule magnetic tunnel junctions.

scholarly journals A Survey on the Modeling of Magnetic Tunnel Junctions for Circuit Simulation

2016 ◽  
Vol 2016 ◽  
pp. 1-12 ◽  
Author(s):  
Hyein Lim ◽  
Seungjun Lee ◽  
Hyungsoon Shin
Keyword(s):  
Low Power ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Switching Behavior ◽  
Behavioral Models ◽  
Physical Mechanisms ◽  
Wide Range ◽  
Voltage Dependent

Spin-transfer torque-based magnetoresistive random access memory (STT-MRAM) is a promising candidate for universal memory that may replace traditional memory forms. It is expected to provide high-speed operation, scalability, low-power dissipation, and high endurance. MRAM switching technology has evolved from the field-induced magnetic switching (FIMS) technique to the spin-transfer torque (STT) switching technique. Additionally, material technology that induces perpendicular magnetic anisotropy (PMA) facilitates low-power operation through the reduction of the switching current density. In this paper, the modeling of magnetic tunnel junctions (MTJs) is reviewed. Modeling methods and models of MTJ characteristics are classified into two groups, macromodels and behavioral models, and the most important characteristics of MTJs, the voltage-dependent MTJ resistance and the switching behavior, are compared. To represent the voltage dependency of MTJ resistance, some models are based on physical mechanisms, such as Landau-Lifshitz-Gilbert (LLG) equation or voltage-dependent conductance. Some behavioral models are constructed by adding fitting parameters or introducing new physical parameters to represent the complex switching behavior of an MTJ over a wide range of input current conditions. Other models that are not based on physical mechanisms are implemented by simply fitting to experimental data.

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