scholarly journals Current-voltage characteristics and the zero-resistance state in a two-dimensional electron gas

2003 ◽  
Vol 67 (24) ◽  
Author(s):  
F. S. Bergeret ◽  
B. Huckestein ◽  
A. F. Volkov
Author(s):  
Asmae Babaya ◽  
Bri Seddik ◽  
Saadi Adil

This paper is mainly dedicated to understand the phenomena governing the formation of two-dimensional electron gas (2DEG) confined in the quantum well which hold the role of the channel in the high electron density transistors (HEMT) based on AlGaN / GaN heterojunction. The theory takes into account: the crystal structure, the spontaneous and piezoelectric polarization concept, the formation mechanism of two-dimensional electron gas at the AlGaN / GaN interface, the approximate resolution of the Poisson and Schrödinger equations to determine the density of Two-dimensional electron gas after the analytical formula of the current-voltage characteristic is established. Our study is also concerned with the dependence of the two-dimensional electron gas density on the following technological parameters: Aluminum molare fraction, AlGaN layer thickness and AlGaN layer doping, In order to control the influence of these parameters on the device performance. Finally, the current-voltage characteristic which reflects the variation of the drain-source current as a function of the modulation of the gate voltage has been discussed.


2005 ◽  
Vol 71 (23) ◽  
Author(s):  
Jason Alicea ◽  
Leon Balents ◽  
Matthew P. A. Fisher ◽  
Arun Paramekanti ◽  
Leo Radzihovsky

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