scholarly journals Temperature-dependent magnetization in diluted magnetic semiconductors

2003 ◽  
Vol 67 (15) ◽  
Author(s):  
S. Das Sarma ◽  
E. H. Hwang ◽  
A. Kaminski
Keyword(s):  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Temperature Dependent ◽  
Diluted Magnetic ◽  
Temperature Dependent Magnetization

scholarly journals Temperature dependent magnetization of the two band model for diluted magnetic semiconductors

2014 ◽  
Vol 24 (2) ◽  
pp. 141
Author(s):  
Vu Kim Thai ◽  
Hoang Anh Tuan
Keyword(s):  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Magnetic Coupling ◽  
Band Model ◽  
Coupling Constant ◽  
Temperature Dependent ◽  
Impurity Bands ◽  
Diluted Magnetic ◽  
Two Band Model ◽  
Temperature Dependent Magnetization

The temperature dependent magnetization of a two band model for diluted magnetic semiconductors as a function of magnetic coupling constant, hopping parameters and carrier densities is calculated by using the coherent potential approximation.  It is shown that the degree of overlapping of the impurity bands  and carrier density are crucial parameters determining the magnetization behavior of the system.

Temperature dependent localization in diluted magnetic semiconductors

1994 ◽  
Vol 194-196 ◽  
pp. 995-996 ◽  
Author(s):  
P. Gło´d ◽  
T. Dietl ◽  
M. Sawicki ◽  
I. Miotkowski
Keyword(s):  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Temperature Dependent ◽  
Diluted Magnetic

THE MAGNETIC PROPERTIES OF II-VI GROUP Fe-TYPE DILUTED MAGNETIC SEMICONDUCTORS

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-873-C8-874
Author(s):  
H. J. M. Swagten ◽  
A. Twardowski ◽  
F. A. Arnouts ◽  
W. J. M. de Jonge ◽  
M. Demianiuk
Keyword(s):  
Magnetic Properties ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic

Assessment of the H2 Followed by Air Sintering of Co-doped In2O3 Based Diluted Magnetic Semiconductors

2017 ◽  
Vol 9 (2) ◽  
pp. 02003-1-02003-3
Author(s):  
Rana Mukherji ◽  
◽  
Vishal Mathur ◽  
Arvind Samariya ◽  
Manishita Mukherji ◽  
...  
Keyword(s):  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic ◽  
Co Doped

scholarly journals The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4138
Author(s):  
Ye Yuan ◽  
Yufang Xie ◽  
Ning Yuan ◽  
Mao Wang ◽  
René Heller ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Ion Implantation ◽  
Diluted Magnetic Semiconductors ◽  
Laser Annealing ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Co Doping ◽  
Diluted Magnetic

One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.

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