Low-temperature saturation of variable-range hopping and delocalization of electron states by entanglement with phonons in two dimensions

2003 ◽  
Vol 67 (14) ◽  
Author(s):  
Ye Xiong ◽  
X. C. Xie ◽  
Shi-Jie Xiong
Keyword(s):  
Low Temperature ◽  
Two Dimensions ◽  
Variable Range Hopping ◽  
Electron States ◽  
Variable Range

Processing and Characterization of Amorphous Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

2018 ◽  
Vol 775 ◽  
pp. 238-245 ◽  
Author(s):  
Thitinai Gaewdang ◽  
Ngamnit Wongcharoen
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Copper Oxide ◽  
Flow Rate ◽  
Localized States ◽  
Positive Sign ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Deposited Films

In this paper, copper oxide (CuOx) thin films with amorphous phase were prepared on glass substrates by reactive dc magnetron sputtering. The influence of the flow rate of O2 on the structural, optical and electrical properties of the as-deposited films was systematically studied. XRD revealed that the as-deposited films remained amorphous in the whole range of adjusted oxygen flow rate. Surface morphology and nanoparticle size of the films were observed by AFM. Electrical resistivity and Hall effect measurements were performed on the films with van der Pauw configuration. The positive sign of the Hall coefficient confirmed the p-type conductivity in all studied films. From temperature-dependent electrical conductivity of the films prepared at R(O2) of 1.5 sccm, it was show that three types of behavior can be expected, nearest-neighbor hopping at high temperature range (200-300 K), the Mott variable range hopping at low temperature (110-190 K) and Efros-Shklovskii variable range hopping at very low temperature (65-100 K). Some important parameters corresponding to Mott-VRH and ES-VRH like density of localized states near the Fermi level, localization length, degree of disorder, hopping distance and hopping energy were determined. These parameters would be helpful for optimizing the performance of photovoltaic applications.

Variable range hopping in Si:P at very low temperature

1980 ◽  
Vol 33 (7) ◽  
pp. 793-795 ◽  
Author(s):  
Y. Ootuka ◽  
F. Komori ◽  
Y. Monden ◽  
S. Kobayashi ◽  
W. Sasaki
Keyword(s):  
Low Temperature ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Very Low Temperature

Reduction of variable range hopping conduction in low-temperature molecular-beam epitaxy GaAs

2004 ◽  
Vol 95 (7) ◽  
pp. 3553-3556 ◽  
Author(s):  
H. A. Albuquerque ◽  
A. G. de Oliveira ◽  
G. M. Ribeiro ◽  
R. L. da Silva ◽  
W. N. Rodrigues ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Hopping Conduction ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Variable Range Hopping Conduction

Low-temperature polaronic relaxations with variable range hopping conductivity in FeTiMO6(M=Ta,Nb,Sb)

2011 ◽  
Vol 84 (6) ◽  
Author(s):  
S. K. Deshpande ◽  
S. N. Achary ◽  
Rohini Mani ◽  
J. Gopalakrishnan ◽  
A. K. Tyagi
Keyword(s):  
Low Temperature ◽  
Variable Range Hopping ◽  
Hopping Conductivity ◽  
Variable Range

Variable range hopping in the Coulomb gap and gate screening in two dimensions

2006 ◽  
Vol 349 (5) ◽  
pp. 404-410 ◽  
Author(s):  
V. Duc Nguyen ◽  
V. Lien Nguyen ◽  
D. Toi Dang
Keyword(s):  
Two Dimensions ◽  
Variable Range Hopping ◽  
Coulomb Gap ◽  
Variable Range
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