Variable range hopping in the Coulomb gap and gate screening in two dimensions

2006 ◽  
Vol 349 (5) ◽  
pp. 404-410 ◽  
Author(s):  
V. Duc Nguyen ◽  
V. Lien Nguyen ◽  
D. Toi Dang
1993 ◽  
Vol 32 (S3) ◽  
pp. 675 ◽  
Author(s):  
J. G. Albornoz ◽  
E. Hernández ◽  
S. M. Wasim ◽  
P. Bocaranda

2004 ◽  
Vol 1 (1) ◽  
pp. 42-45 ◽  
Author(s):  
A. M. Somoza ◽  
M. Ortuño ◽  
M. Pollak

2011 ◽  
Vol 161 (5-6) ◽  
pp. 528-534 ◽  
Author(s):  
Y. Koval ◽  
I. Lazareva ◽  
P. Müller

1994 ◽  
Vol 08 (07) ◽  
pp. 883-889 ◽  
Author(s):  
A.G. ZABRODSKII ◽  
A.G. ANDREEV

An investigation was made of a batch of samples of neutron transmutation-doped (NTD) Ge:Ga with the degree of compensation K=0.3 and the concentration of the main impurity (Ga) from N=3.6 · 1014cm−3 to Nc=2.5 · 1017cm−3, corresponding to the MI transition. The following were studied: the parameters of NTD Ge:Ga, the temperature dependence of hopping transport, the ɛ3 region of the nearest neighbor hopping (NNH), the saturation of NNH, variable range hopping (VRH) and the Coulomb gap.


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