scholarly journals Temperature dependent resistivity of spin-split subbands in GaAs two-dimensional hole systems

2003 ◽  
Vol 67 (11) ◽  
Author(s):  
E. H. Hwang ◽  
S. Das Sarma
Keyword(s):  
Two Dimensional ◽  
Temperature Dependent ◽  
Temperature Dependent Resistivity

Simulation of Temperature-Dependent Resistivity for Manganite La 1/3 Ca 2/3 MnO 3

2006 ◽  
Vol 23 (6) ◽  
pp. 1551-1553 ◽  
Author(s):  
Cao Shuo ◽  
Zhou Qing-Li ◽  
Guan Dong-Yi ◽  
Lu Hui-Bin ◽  
Yang Guo-Zhen
Keyword(s):  
Temperature Dependent ◽  
Temperature Dependent Resistivity

Theory of ultrasonic attenuation in one and two dimensional metals

1976 ◽  
Vol 54 (14) ◽  
pp. 1454-1460 ◽  
Author(s):  
T. Tiedje ◽  
R. R. Haering
Keyword(s):  
Ultrasonic Attenuation ◽  
Three Dimensional ◽  
Electronic Systems ◽  
Two Dimensional ◽  
Temperature Dependent ◽  
One Dimensional ◽  
The Difference

The theory of ultrasonic attenuation in metals is extended so that it applies to quasi one and two dimensional electronic systems. It is shown that the attenuation in such systems differs significantly from the well-known results for three dimensional systems. The difference is particularly marked for one dimensional systems, for which the attenuation is shown to be strongly temperature dependent.

scholarly journals 151Eu Mössbauer Spectroscopic Characterization of EuRu4B4 and the New Boride EuRuB4

2010 ◽  
Vol 65 (1) ◽  
pp. 90-94 ◽  
Author(s):  
Thomas Harmening ◽  
Rainer Pöttgen
Keyword(s):  
Boron Atom ◽  
Mössbauer Spectra ◽  
Induction Furnace ◽  
Spectroscopic Characterization ◽  
Two Dimensional ◽  
Temperature Dependent ◽  
X Ray ◽  
Trivalent Europium ◽  
Mossbauer Spectra

Samples of EuRu4B4 and of the new boride EuRuB4 were prepared from europium, RuB, and RuB4 precursor alloys, respectively, in sealed tantalum tubes in an induction furnace. EuRu4B4 crystallizes with the LuRu4B4 structure, a = 748.1(1), c = 1502.3(4) pm. The structure of EuRuB4 was refined on the basis of X-ray diffractometer data: Pbam, a = 599.7(1), b = 1160.7(3), c = 358.06(7) pm, wR2 = 0.0691, 474 F2 values, and 38 variables. The four crystallographically independent boron sites build up layers which consist of almost regular pentagons and heptagons which sandwich the ruthenium and europium atoms, respectively. Within the two-dimensional [B4] networks each boron atom has a slightly distorted trigonal-planar boron coordination with B-B distances in the range 172 - 186 pm. Temperature-dependent 151Eu Mössbauer spectra show stable trivalent europium for EuRu4B4 and EuRuB4

scholarly journals Study of Thermometry in Two-Dimensional Sb2Te3 from Temperature-Dependent Raman Spectroscopy

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Manavendra P. Singh ◽  
Manab Mandal ◽  
K. Sethupathi ◽  
M. S. Ramachandra Rao ◽  
Pramoda K. Nayak
Keyword(s):  
Thermal Conductivity ◽  
Raman Spectroscopy ◽  
Temperature Coefficient ◽  
Heat Dissipation ◽  
Peak Position ◽  
Two Dimensional ◽  
Phonon Modes ◽  
Temperature Dependent ◽  
Excellent Candidate ◽  
High Figure

AbstractDiscovery of two-dimensional (2D) topological insulators (TIs) demonstrates tremendous potential in the field of thermoelectric since the last decade. Here, we have synthesized 2D TI, Sb2Te3 of various thicknesses in the range 65–400 nm using mechanical exfoliation and studied temperature coefficient in the range 100–300 K using micro-Raman spectroscopy. The temperature dependence of the peak position and line width of phonon modes have been analyzed to determine the temperature coefficient, which is found to be in the order of 10–2 cm−1/K, and it decreases with a decrease in Sb2Te3 thickness. Such low-temperature coefficient would favor to achieve a high figure of merit (ZT) and pave the way to use this material as an excellent candidate for thermoelectric materials. We have estimated the thermal conductivity of Sb2Te3 flake with the thickness of 115 nm supported on 300-nm SiO2/Si substrate which is found to be ~ 10 W/m–K. The slightly higher thermal conductivity value suggests that the supporting substrate significantly affects the heat dissipation of the Sb2Te3 flake.

SYNTHESIS, STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF IN-SITU SYNTHESIZED POLYANILINE/SILVER NANOCOMPOSITES

2012 ◽  
Vol 05 (03) ◽  
pp. 1250026 ◽  
Author(s):  
FAHAD ALAM ◽  
SAJID ALI ANSARI ◽  
WASI KHAN ◽  
M. EHTISHAM KHAN ◽  
A. H. NAQVI
Keyword(s):  
Single Phase ◽  
In Situ Polymerization ◽  
Optical And Electrical Properties ◽  
Silver Colloid ◽  
Dielectric Measurements ◽  
Temperature Dependent ◽  
Colloidal Form ◽  
Uv Visible ◽  
Temperature Dependent Resistivity

Polyaniline (PANI) is recognized as one of the most important conducting polymers due to its high conductivity and good stability. In this paper, polyaniline/silver (PANI/Ag) nanocomposites were synthesized by in-situ polymerization of aniline using ammonium peroxydisulphate (APS) as oxidizing agent with varying concentration of Ag nanoparticles colloids (0 ml, 25 ml and 50 ml). Silver nanoparticles were synthesized separately in colloidal form from silver nitrate (Ag2NO3) with the help of reducing agent sodium borohydride (NaBH4). The PANI/ Ag nanocomposites were characterized by XRD, SEM, AFM, UV-visible, temperature dependent resistivity and dielectric measurements. All samples show a single phase nature of the nanoparticles. The electrical resistivity as function of temperature was measured in the temperature range 298–383 K, which indicates a semiconducting to metallic transition at 373 K and 368 K for 25 ml and 50 ml silver colloid samples, respectively.

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