Carbon nanotube self-doping: Calculation of the hole carrier concentration

2003 ◽  
Vol 67 (3) ◽  
Author(s):  
A. Rakitin ◽  
C. Papadopoulos ◽  
J. M. Xu
Keyword(s):  
Carbon Nanotube ◽  
Carrier Concentration ◽  
Hole Carrier Concentration

The Origin of Lower Hole Carrier Concentration in Methylammonium Tin Halide Films Grown by a Vapor-Assisted Solution Process

2016 ◽  
Vol 2 (1) ◽  
pp. 22-28 ◽  
Author(s):  
Takamichi Yokoyama ◽  
Tze-Bin Song ◽  
Duyen H. Cao ◽  
Constantinos C. Stoumpos ◽  
Shinji Aramaki ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Solution Process ◽  
Hole Carrier Concentration ◽  
Halide Films

Carbon nanotube: An indirect ~ 0 eV band gap material

2016 ◽  
pp. 3546-3550
Author(s):  
Maheshwar Sharon ◽  
S. S. Kawale ◽  
Rakesh Afre ◽  
Madhuri Sharon ◽  
C. H. Bhosale
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Band Gap ◽  
Carrier Concentration ◽  
Hydrogen Atmosphere ◽  
Sem Analysis ◽  
Direct Band Gap ◽  
Direct Band ◽  
Indirect Band Gap ◽  
First Time

Thin film of carbon was synthesized from camphor (C10H16O) by CVD technique in hydrogen atmosphere. For the first time it is confirmed the presence of almost zero indirect band gap in addition to its direct band gap.. Carrier concentration with intrinsic carbon is found to be around 1021 n/cm3. It is suggested that unless the zero indirect band gap is  increased carbon thin film   cannot be used for making a p:n junction. XRD, Raman and SEM analysis are performed.

scholarly journals Study of the heavily p-type doping of cubic GaN with Mg

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
C. A. Hernández-Gutiérrez ◽  
Y. L. Casallas-Moreno ◽  
Victor-Tapio Rangel-Kuoppa ◽  
Dagoberto Cardona ◽  
Yaoqiao Hu ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Density Functional ◽  
Deep Level ◽  
Cubic Phase ◽  
Suitable Alternative ◽  
Free Hole ◽  
Hole Carrier Concentration ◽  
Cubic Gan ◽  
P Type ◽  
Mg Doped

Abstract We have studied the Mg doping of cubic GaN grown by plasma-assisted Molecular Beam Epitaxy (PA-MBE) over GaAs (001) substrates. In particular, we concentrated on conditions to obtain heavy p-type doping to achieve low resistance films which can be used in bipolar devices. We simulated the Mg-doped GaN transport properties by density functional theory (DFT) to compare with the experimental data. Mg-doped GaN cubic epitaxial layers grown under optimized conditions show a free hole carrier concentration with a maximum value of 6 × 1019 cm−3 and mobility of 3 cm2/Vs. Deep level transient spectroscopy shows the presence of a trap with an activation energy of 114 meV presumably associated with nitrogen vacancies, which could be the cause for the observed self-compensation behavior in heavily Mg-doped GaN involving Mg-VN complexes. Furthermore, valence band analysis by X-ray photoelectron spectroscopy and photoluminescence spectroscopy revealed an Mg ionization energy of about 100 meV, which agrees quite well with the value of 99.6 meV obtained by DFT. Our results show that the cubic phase is a suitable alternative to generate a high free hole carrier concentration for GaN.

Synthesis and Low Temperature Physical Properties of Metal Substituted CoSr2YCu2Oy.

2004 ◽  
Vol 848 ◽  
Author(s):  
Masahiro Shiraki ◽  
Jun-ichi Shimoyama ◽  
Shigeru Horii ◽  
Kohji Kishio
Keyword(s):  
Low Temperature ◽  
Physical Properties ◽  
Carrier Concentration ◽  
Excess Oxygen ◽  
Superconducting Transition ◽  
Metal Substitution ◽  
Hole Carrier Concentration ◽  
Carrier Doping ◽  
Cation Substitutions

ABSTRACTIn the present study, hole carrier doping was attempted for CoSr2YCu2O7+δ which is a relating compound to a well known superconductor YBa2Cu3O7-δ by introduction of excess oxygen into CoO1+δ layer and cation substitutions. High valence metal substitution for cobalt and barium substitution for strontium were revealed to be able to introduce excess oxygen and generate hole carriers. Additional calcium substitution for yttrium enhanced hole carrier concentration p/Cu > 0.05 which was enough for superconductivity, however superconducting transition was not observed. This is possibly due to incorporation of cobalt in the CuO2 planes.

Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates

2010 ◽  
Vol 108 (2) ◽  
pp. 023516 ◽  
Author(s):  
T. Suski ◽  
G. Staszczak ◽  
S. Grzanka ◽  
R. Czernecki ◽  
E. Litwin-Staszewska ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Hole Carrier Concentration

Carbon Nanotube and Graphene Device Physics

2009 ◽  
Author(s):  
H.-S. Philip Wong ◽  
Deji Akinwande
Keyword(s):  
Carbon Nanotube ◽  
Device Physics

Carbon nanotube instillation in mice causes sustained pulmonary inflammation and apoptosis of alveolar macrophages

Pneumologie ◽  
2011 ◽  
Vol 65 (12) ◽  
Author(s):  
NC Habel ◽  
S Hirn ◽  
F Tian ◽  
O Eickelberg ◽  
T Stoeger
Keyword(s):  
Carbon Nanotube ◽  
Alveolar Macrophages ◽  
Pulmonary Inflammation
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