Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates

2010 ◽  
Vol 108 (2) ◽  
pp. 023516 ◽  
Author(s):  
T. Suski ◽  
G. Staszczak ◽  
S. Grzanka ◽  
R. Czernecki ◽  
E. Litwin-Staszewska ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Hole Carrier Concentration

The Origin of Lower Hole Carrier Concentration in Methylammonium Tin Halide Films Grown by a Vapor-Assisted Solution Process

2016 ◽  
Vol 2 (1) ◽  
pp. 22-28 ◽  
Author(s):  
Takamichi Yokoyama ◽  
Tze-Bin Song ◽  
Duyen H. Cao ◽  
Constantinos C. Stoumpos ◽  
Shinji Aramaki ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Solution Process ◽  
Hole Carrier Concentration ◽  
Halide Films

scholarly journals Study of the heavily p-type doping of cubic GaN with Mg

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
C. A. Hernández-Gutiérrez ◽  
Y. L. Casallas-Moreno ◽  
Victor-Tapio Rangel-Kuoppa ◽  
Dagoberto Cardona ◽  
Yaoqiao Hu ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Density Functional ◽  
Deep Level ◽  
Cubic Phase ◽  
Suitable Alternative ◽  
Free Hole ◽  
Hole Carrier Concentration ◽  
Cubic Gan ◽  
P Type ◽  
Mg Doped

Abstract We have studied the Mg doping of cubic GaN grown by plasma-assisted Molecular Beam Epitaxy (PA-MBE) over GaAs (001) substrates. In particular, we concentrated on conditions to obtain heavy p-type doping to achieve low resistance films which can be used in bipolar devices. We simulated the Mg-doped GaN transport properties by density functional theory (DFT) to compare with the experimental data. Mg-doped GaN cubic epitaxial layers grown under optimized conditions show a free hole carrier concentration with a maximum value of 6 × 1019 cm−3 and mobility of 3 cm2/Vs. Deep level transient spectroscopy shows the presence of a trap with an activation energy of 114 meV presumably associated with nitrogen vacancies, which could be the cause for the observed self-compensation behavior in heavily Mg-doped GaN involving Mg-VN complexes. Furthermore, valence band analysis by X-ray photoelectron spectroscopy and photoluminescence spectroscopy revealed an Mg ionization energy of about 100 meV, which agrees quite well with the value of 99.6 meV obtained by DFT. Our results show that the cubic phase is a suitable alternative to generate a high free hole carrier concentration for GaN.

Synthesis and Low Temperature Physical Properties of Metal Substituted CoSr2YCu2Oy.

2004 ◽  
Vol 848 ◽  
Author(s):  
Masahiro Shiraki ◽  
Jun-ichi Shimoyama ◽  
Shigeru Horii ◽  
Kohji Kishio
Keyword(s):  
Low Temperature ◽  
Physical Properties ◽  
Carrier Concentration ◽  
Excess Oxygen ◽  
Superconducting Transition ◽  
Metal Substitution ◽  
Hole Carrier Concentration ◽  
Carrier Doping ◽  
Cation Substitutions

ABSTRACTIn the present study, hole carrier doping was attempted for CoSr2YCu2O7+δ which is a relating compound to a well known superconductor YBa2Cu3O7-δ by introduction of excess oxygen into CoO1+δ layer and cation substitutions. High valence metal substitution for cobalt and barium substitution for strontium were revealed to be able to introduce excess oxygen and generate hole carriers. Additional calcium substitution for yttrium enhanced hole carrier concentration p/Cu > 0.05 which was enough for superconductivity, however superconducting transition was not observed. This is possibly due to incorporation of cobalt in the CuO2 planes.

Low Temperature Deposition of Zinc Oxide Films

2003 ◽  
Vol 763 ◽  
Author(s):  
H. W. Lee ◽  
Y. G. Wang ◽  
S. P. Lau ◽  
B. K. Tay
Keyword(s):  
Zinc Oxide ◽  
Carrier Concentration ◽  
Vacuum Arc ◽  
Zno Films ◽  
Al Alloy ◽  
Pure Zinc ◽  
Zinc Oxide Films ◽  
Alloy Target ◽  
Temperature Deposition ◽  
Filtered Cathodic Vacuum Arc

AbstractA detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied. For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10-3 Ωcm, and that for Al-doped films was 8×10-4 Ωcm. The carrier concentration was found to increase with Al doping.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

scholarly journals Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
High Mobility ◽  
Impurity Scattering ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Layer Deposition ◽  
Growth Feature ◽  
O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

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