scholarly journals Conduction anisotropy, Hall effect, and magnetoresistance of(TMTSF)2ReO4at high temperatures

2003 ◽  
Vol 67 (1) ◽  
Author(s):  
Bojana Korin-Hamzić ◽  
Emil Tafra ◽  
Mario Basletić ◽  
Amir Hamzić ◽  
Gabriele Untereiner ◽  
...  
Keyword(s):  
Hall Effect ◽  
High Temperatures ◽  
Conduction Anisotropy

scholarly journals Conduction anisotropy, Hall effect and magnetoresistance of (TMTSF)2ReO4 at high temperatures

2003 ◽  
Vol 137 (1-3) ◽  
pp. 1323-1324
Author(s):  
B. Korin-Hamzić ◽  
E. Tafra ◽  
M. Basletić ◽  
A. Hamzić ◽  
G. Untereiner ◽  
...  
Keyword(s):  
Hall Effect ◽  
High Temperatures ◽  
Conduction Anisotropy

Apparatus for Measuring the Hall Effect of Low‐Mobility Samples at High Temperatures

1967 ◽  
Vol 38 (11) ◽  
pp. 1658-1661 ◽  
Author(s):  
N. Z. Lupu ◽  
N. M. Tallan ◽  
D. S. Tannhauser
Keyword(s):  
Hall Effect ◽  
High Temperatures

Sensitivity of 2DEG-based Hall-effect sensors at high temperatures

2020 ◽  
Vol 91 (2) ◽  
pp. 025003 ◽  
Author(s):  
H. S. Alpert ◽  
C. A. Chapin ◽  
K. M. Dowling ◽  
S. R. Benbrook ◽  
H. Köck ◽  
...  
Keyword(s):  
Hall Effect ◽  
High Temperatures ◽  
Hall Effect Sensors

scholarly journals Bolometric ferromagnetic resonance techniques for characterising spin-Hall effect at high temperatures

2019 ◽  
Vol 485 ◽  
pp. 304-307 ◽  
Author(s):  
P. Phu ◽  
K. Yamanoi ◽  
K. Ohnishi ◽  
J. Hyodo ◽  
K. Rogdakis ◽  
...  
Keyword(s):  
Hall Effect ◽  
High Temperatures ◽  
Ferromagnetic Resonance ◽  
Spin Hall Effect

High Resistivity GaSb and GaAs Produced by MBE Growth at Elevated Temperatures

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Y. Polyakov ◽  
A. G. Milnes ◽  
M. Stam ◽  
R. G. Wilson ◽  
Z. Q. Fang ◽  
...  
Keyword(s):  
High Temperature ◽  
Hall Effect ◽  
High Temperatures ◽  
Strong Evidence ◽  
Elevated Temperatures ◽  
Schottky Barriers ◽  
High Resistivity ◽  
Epitaxial Layers ◽  
Mbe Growth ◽  
Resistivity Profiling

ABSTRACTIn this paper we show that when grown by MBE at unusually high temperatures epitaxial layers of GaSb and GaAs are semi-insulating. In GaSb combination of Hall effect, TSC, SIMS and two probe resistivity profiling leads us to believe that high resistivity is due to production of midgap centers at elevated temperatures. No strong evidence of the prevalence of such midgap centers was obtained for high temperature GaAs layers and in this case we believe that high resistivity is associated with the formation of Ga-related precipitates acting as internal Schottky barriers.

scholarly journals Resistivity and Hall effect at high temperatures in La0.67Ca0.33MnO3

1999 ◽  
Vol 85 (8) ◽  
pp. 4803-4805 ◽  
Author(s):  
G. Jakob ◽  
W. Westerburg ◽  
F. Martin ◽  
H. Adrian ◽  
P. J. M. van Bentum ◽  
...  
Keyword(s):  
Hall Effect ◽  
High Temperatures
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