scholarly journals Resistivity and Hall effect at high temperatures in La0.67Ca0.33MnO3

1999 ◽  
Vol 85 (8) ◽  
pp. 4803-4805 ◽  
Author(s):  
G. Jakob ◽  
W. Westerburg ◽  
F. Martin ◽  
H. Adrian ◽  
P. J. M. van Bentum ◽  
...  
1967 ◽  
Vol 38 (11) ◽  
pp. 1658-1661 ◽  
Author(s):  
N. Z. Lupu ◽  
N. M. Tallan ◽  
D. S. Tannhauser

2020 ◽  
Vol 91 (2) ◽  
pp. 025003 ◽  
Author(s):  
H. S. Alpert ◽  
C. A. Chapin ◽  
K. M. Dowling ◽  
S. R. Benbrook ◽  
H. Köck ◽  
...  

2003 ◽  
Vol 67 (1) ◽  
Author(s):  
Bojana Korin-Hamzić ◽  
Emil Tafra ◽  
Mario Basletić ◽  
Amir Hamzić ◽  
Gabriele Untereiner ◽  
...  

2019 ◽  
Vol 485 ◽  
pp. 304-307 ◽  
Author(s):  
P. Phu ◽  
K. Yamanoi ◽  
K. Ohnishi ◽  
J. Hyodo ◽  
K. Rogdakis ◽  
...  

2003 ◽  
Vol 137 (1-3) ◽  
pp. 1323-1324
Author(s):  
B. Korin-Hamzić ◽  
E. Tafra ◽  
M. Basletić ◽  
A. Hamzić ◽  
G. Untereiner ◽  
...  

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Y. Polyakov ◽  
A. G. Milnes ◽  
M. Stam ◽  
R. G. Wilson ◽  
Z. Q. Fang ◽  
...  

ABSTRACTIn this paper we show that when grown by MBE at unusually high temperatures epitaxial layers of GaSb and GaAs are semi-insulating. In GaSb combination of Hall effect, TSC, SIMS and two probe resistivity profiling leads us to believe that high resistivity is due to production of midgap centers at elevated temperatures. No strong evidence of the prevalence of such midgap centers was obtained for high temperature GaAs layers and in this case we believe that high resistivity is associated with the formation of Ga-related precipitates acting as internal Schottky barriers.


2018 ◽  
Vol 98 (16) ◽  
Author(s):  
Gang Li ◽  
Werner Hanke ◽  
Ewelina M. Hankiewicz ◽  
Felix Reis ◽  
Jörg Schäfer ◽  
...  

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