Consistent size dependency of core-level binding energy shifts and single-electron tunneling effects in supported gold nanoclusters

2002 ◽  
Vol 66 (11) ◽  
Author(s):  
Taizo Ohgi ◽  
Daisuke Fujita
Keyword(s):  
Binding Energy ◽  
Electron Tunneling ◽  
Gold Nanoclusters ◽  
Core Level ◽  
Single Electron ◽  
Size Dependency ◽  
Single Electron Tunneling ◽  
Supported Gold ◽  
Core Level Binding Energy

pH-Gated Single-Electron Tunneling in Chemically Modified Gold Nanoclusters

1998 ◽  
Vol 120 (30) ◽  
pp. 7645-7646 ◽  
Author(s):  
Louis C. Brousseau ◽  
Qi Zhao ◽  
David A. Shultz ◽  
Daniel L. Feldheim
Keyword(s):  
Electron Tunneling ◽  
Gold Nanoclusters ◽  
Single Electron ◽  
Chemically Modified ◽  
Single Electron Tunneling

Sensing of dynamic charge states using single-electron tunneling transistors

1998 ◽  
Vol 168 (2) ◽  
pp. 219
Author(s):  
V.A. Krupenin ◽  
S.V. Lotkhov ◽  
H. Scherer ◽  
A.B. Zorin ◽  
F.-J. Ahlers ◽  
...  
Keyword(s):  
Electron Tunneling ◽  
Single Electron ◽  
Single Electron Tunneling ◽  
Dynamic Charge ◽  
Charge States

Origin of the Ba core-level binding-energy difference between tetragonal and orthorhombicYBa2Cu3O7−δ

1991 ◽  
Vol 43 (4) ◽  
pp. 3695-3698 ◽  
Author(s):  
F. Parmigiani ◽  
G. Pacchioni ◽  
C. R. Brundle ◽  
D. E. Fowler ◽  
P. S. Bagus
Keyword(s):  
Binding Energy ◽  
Energy Difference ◽  
Core Level ◽  
Binding Energy Difference ◽  
Core Level Binding Energy

Silicon single-electron tunneling device fabricated in an undulated ultrathin silicon-on-insulator film

2001 ◽  
Vol 90 (7) ◽  
pp. 3551-3557 ◽  
Author(s):  
Ken Uchida ◽  
Junji Koga ◽  
Ryuji Ohba ◽  
Shin-ichi Takagi ◽  
Akira Toriumi
Keyword(s):  
Electron Tunneling ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Insulator Film ◽  
Single Electron Tunneling
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