Compton scattering, positron annihilation, and the electronic properties of quantum dots

2002 ◽  
Vol 65 (24) ◽  
Author(s):  
R. Saniz ◽  
B. Barbiellini ◽  
A. Denison
2021 ◽  
Vol 103 (23) ◽  
Author(s):  
H. V. Grushevskaya ◽  
G. G. Krylov ◽  
S. P. Kruchinin ◽  
B. Vlahovic ◽  
Stefano Bellucci

2016 ◽  
Vol 18 (5) ◽  
pp. 3854-3861 ◽  
Author(s):  
Szymon Godlewski ◽  
Marek Kolmer ◽  
Mads Engelund ◽  
Hiroyo Kawai ◽  
Rafal Zuzak ◽  
...  

Starphene molecules are weakly attached to single dangling bond quantum dots, retaining the unperturbed originally designed electronic properties.


2017 ◽  
Vol 5 (1) ◽  
pp. 149-158 ◽  
Author(s):  
Bartłomiej Cichy ◽  
Dominika Wawrzynczyk ◽  
Marek Samoc ◽  
Wiesław Stręk

Electronic as well as third-order nonlinear optical properties of chalcopyrite AgInS2 and non-stoichiometric spinel AgIn5S8 quantum dots compared with corresponding Zn2+ alloyed compounds are presented in this work.


2013 ◽  
Vol 2 (1) ◽  
Author(s):  
A. Shamloo ◽  
A.P. Sowa

AbstractWe consider the electronic properties of a system consisting of two quantum dots in physical proximity, which we will refer to as the double-Qdot. Double-Qdots are attractive in light of their potential application to spin-based quantum computing and other electronic applications, e.g. as specialized sensors. Our main goal is to derive the essential properties of the double-Qdot from a model that is rigorous yet numerically tractable, and largely circumvents the complexities of an ab initio simulation. To this end we propose a novel Hamiltonian that captures the dynamics of a bi-partite quantum system, wherein the interaction is described via a Wiener-Hopf type operator. We subsequently describe the density of states function and derive the electronic properties of the underlying system. The analysis seems to capture a plethora of electronic profiles, and reveals the versatility of the proposed framework for double-Qdot channel modelling.


2021 ◽  
Vol 8 ◽  
Author(s):  
Muhammad Imran ◽  
Muhammad Jawwad Saif ◽  
Tahir Farooq ◽  
Javed Iqbal

Thiols are efficient capping agents used for the synthesis of semiconductor and metal nanoparticles. Commonly, long-chain thiols are used as passivating agents to provide stabilization to nanoparticles. Theoretical methods rarely reported aromatic thiol ligands’ effects on small-sized CdTe quantum dots’ structural and electronic properties. We have studied and compared the structural and electronic properties of (i) bare and (ii) aromatic thiols (thiophenol, 4-methoxybenzenethiol, 4-mercaptobenzonitrile, and 4-mercaptobenzoic acid) capped CdnTen quantum dots (QDs). Aromatic thiols are used as thiol-radical because of the higher tendency of thiol-radicals to bind with Cd atoms. This work provides an understanding of how the capping agents affect specific properties. The results show that all aromatic thiol-radical ligands caused significant structural distortion in the geometries. The aromatic thiol-radical ligands stabilize LUMOs, stabilize or destabilize HOMOs, and decrease HOMO-LUMO gaps for all the capped QDs. The stabilization of LUMOs is more pronounced than the destabilization of HOMOs. We also studied the effect of solvent on structural and electronic properties. TD-DFT calculations were performed to calculate the absorption spectra of bare and capped QDs, and all the capping ligands resulted in the redshift of absorption spectra.


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