Impact of the non-planar morphology of pre-patterned substrates on the structural and electronic properties of embedded site-controlled InAs quantum dots

2013 ◽  
Vol 114 (17) ◽  
pp. 174304 ◽  
Author(s):  
T. V. Hakkarainen ◽  
E. Luna ◽  
J. Tommila ◽  
A. Schramm ◽  
M. Guina
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
Patterned Substrates ◽  
Inas Quantum Dots ◽  
Structural And Electronic Properties

Site-controlled growth and luminescence of InAs quantum dots using in situ Ga-assisted deoxidation of patterned substrates

2008 ◽  
Vol 93 (10) ◽  
pp. 101908 ◽  
Author(s):  
P. Atkinson ◽  
S. Kiravittaya ◽  
M. Benyoucef ◽  
A. Rastelli ◽  
O. G. Schmidt
Keyword(s):  
Quantum Dots ◽  
Controlled Growth ◽  
Patterned Substrates ◽  
Inas Quantum Dots

scholarly journals Effects of Aromatic Thiol Capping Agents on the Structural and Electronic Properties of CdnTen (n = 6,8 and 9) Quantum Dots

2021 ◽  
Vol 8 ◽  
Author(s):  
Muhammad Imran ◽  
Muhammad Jawwad Saif ◽  
Tahir Farooq ◽  
Javed Iqbal
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
Absorption Spectra ◽  
Capping Agents ◽  
Aromatic Thiol ◽  
Td Dft ◽  
Structural And Electronic Properties ◽  
Aromatic Thiols ◽  
Capping Ligands ◽  
Homo Lumo

Thiols are efficient capping agents used for the synthesis of semiconductor and metal nanoparticles. Commonly, long-chain thiols are used as passivating agents to provide stabilization to nanoparticles. Theoretical methods rarely reported aromatic thiol ligands’ effects on small-sized CdTe quantum dots’ structural and electronic properties. We have studied and compared the structural and electronic properties of (i) bare and (ii) aromatic thiols (thiophenol, 4-methoxybenzenethiol, 4-mercaptobenzonitrile, and 4-mercaptobenzoic acid) capped CdnTen quantum dots (QDs). Aromatic thiols are used as thiol-radical because of the higher tendency of thiol-radicals to bind with Cd atoms. This work provides an understanding of how the capping agents affect specific properties. The results show that all aromatic thiol-radical ligands caused significant structural distortion in the geometries. The aromatic thiol-radical ligands stabilize LUMOs, stabilize or destabilize HOMOs, and decrease HOMO-LUMO gaps for all the capped QDs. The stabilization of LUMOs is more pronounced than the destabilization of HOMOs. We also studied the effect of solvent on structural and electronic properties. TD-DFT calculations were performed to calculate the absorption spectra of bare and capped QDs, and all the capping ligands resulted in the redshift of absorption spectra.

scholarly journals Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

2012 ◽  
Vol 86 (3) ◽  
Author(s):  
T. Nowozin ◽  
A. Marent ◽  
L. Bonato ◽  
A. Schliwa ◽  
D. Bimberg ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
High Purity ◽  
Structural And Electronic Properties ◽  
Self Assembled

scholarly journals Single Photon Emission from Site-Controlled InAs Quantum Dots Grown on GaAs(001) Patterned Substrates

ACS Nano ◽  
2009 ◽  
Vol 3 (6) ◽  
pp. 1513-1517 ◽  
Author(s):  
J. Martín-Sánchez ◽  
G. Muñoz-Matutano ◽  
J. Herranz ◽  
J. Canet-Ferrer ◽  
B. Alén ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Single Photon ◽  
Photon Emission ◽  
Patterned Substrates ◽  
Single Photon Emission ◽  
Inas Quantum Dots

Imaging and probing electronic properties of self-assembled InAs quantum dots by atomic force microscopy with conductive tip

1999 ◽  
Vol 74 (6) ◽  
pp. 844-846 ◽  
Author(s):  
Ichiro Tanaka ◽  
I. Kamiya ◽  
H. Sakaki ◽  
N. Qureshi ◽  
S. J. Allen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Atomic Force Microscopy ◽  
Electronic Properties ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Atomic Force ◽  
Self Assembled

Structural and electronic properties of self-organized quantum dots

2003 ◽  
pp. 62-102
Author(s):  
Victor M. Ustinov ◽  
Alexey E. Zhukov ◽  
Anton Yu. Egorov ◽  
Nikolai A. Maleev
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
Self Organized ◽  
Structural And Electronic Properties
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