scholarly journals Binding energy of charged excitons in ZnSe-based quantum wells

2002 ◽  
Vol 65 (16) ◽  
Author(s):  
G. V. Astakhov ◽  
D. R. Yakovlev ◽  
V. P. Kochereshko ◽  
W. Ossau ◽  
W. Faschinger ◽  
...  
Keyword(s):  
Binding Energy ◽  
Quantum Wells

scholarly journals Exciton Binding Energy in Extremely Shallow Quantum Wells

1995 ◽  
Vol 87 (2) ◽  
pp. 528-532 ◽  
Author(s):  
J. Kossut ◽  
J.K. Furdyna
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Exciton Binding Energy

Influence of interface localization on the binding energy of acceptor bound excitons in narrow GaAs/AlxGa1−xAs quantum wells

1995 ◽  
Vol 51 (19) ◽  
pp. 13221-13225 ◽  
Author(s):  
C. I. Harris ◽  
B. Monemar ◽  
H. Kalt ◽  
P. O. Holtz ◽  
M. Sundaram ◽  
...  
Keyword(s):  
Binding Energy ◽  
Quantum Wells

The Effects on Electric Field and Hydrostatic Pressure on the Doped Properties in a Strained (In,Ga)N-GaN Coupled Quantum Wells

2021 ◽  
Vol 16 (1) ◽  
pp. 97-103
Author(s):  
Xin-Nan Li ◽  
Guang-Xin Wang ◽  
Xiu-Zhi Duan
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Electric Field ◽  
Quantum Wells ◽  
Variational Approach ◽  
Coupled Quantum Wells ◽  
Zinc Blende ◽  
Impurity Interaction ◽  
The Right ◽  
Peak Value

A variational approach is utilized to investigated the electron-impurity interaction in zinc-blende (In,Ga)N-GaN strained coupled quantum wells. The donor imputrity states are studied in consideration of the effects of hydrostatic pressure and external electric field. Our results indicate that the binding energy visibly depends on hydrostatic pressure, strain of coupled quantum wells, and applied electric field. The binding energy demonstrates a peak value with the reduction of the left-well width, and which displays a minimum value with the increment of the middle-barrier width. A decreasing behavior on the binding energy is also demonstrated when the right-well width enhances. Also the binding energy augments constantly with the increasing hydrostatic pressure. Besides, the dependency of the binding energy on variation of impurity position has been analyzed detailedly.

Effective mass and exciton binding energy in ordered (Al)GaInP quantum wells evaluated by derivative of reflectivity

2002 ◽  
Vol 91 (4) ◽  
pp. 2553-2555 ◽  
Author(s):  
Jun Shao ◽  
Achim Dörnen ◽  
Rolf Winterhoff ◽  
Ferdinand Scholz
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Effective Mass ◽  
Exciton Binding Energy

scholarly journals Binding energy and dephasing of biexcitons inIn0.18Ga0.82As/GaAssingle quantum wells

1999 ◽  
Vol 60 (7) ◽  
pp. 4505-4508 ◽  
Author(s):  
P. Borri ◽  
W. Langbein ◽  
J. M. Hvam ◽  
F. Martelli
Keyword(s):  
Binding Energy ◽  
Quantum Wells

Binding energy of shallow donor impurity in asymmetric quantum wells

2010 ◽  
Vol 43 (1) ◽  
pp. 372-374 ◽  
Author(s):  
Chaojin Zhang ◽  
Zhanxin Wang ◽  
Ying Liu ◽  
Kangxian Guo
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Shallow Donor ◽  
Donor Impurity ◽  
Asymmetric Quantum
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