Exciton binding energy and external-field-induced blue shift in double quantum wells

1989 ◽  
Vol 40 (8) ◽  
pp. 5515-5521 ◽  
Author(s):  
Ian Galbraith ◽  
Geoffrey Duggan
Keyword(s):  
Binding Energy ◽  
External Field ◽  
Quantum Wells ◽  
Blue Shift ◽  
Exciton Binding Energy ◽  
Double Quantum

Optical Study of Bandedge Blue-Shift in AlGaN/GaN Double Quantum Wells

1997 ◽  
Vol 14 (9) ◽  
pp. 708-711
Author(s):  
Yang Kai ◽  
Shen Bo ◽  
Zhang Rong ◽  
Zhou Yu-gang ◽  
Chen Zhi-zhong ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Blue Shift ◽  
Double Quantum ◽  
Optical Study

scholarly journals Exciton Binding Energy in Extremely Shallow Quantum Wells

1995 ◽  
Vol 87 (2) ◽  
pp. 528-532 ◽  
Author(s):  
J. Kossut ◽  
J.K. Furdyna
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Exciton Binding Energy

Effective mass and exciton binding energy in ordered (Al)GaInP quantum wells evaluated by derivative of reflectivity

2002 ◽  
Vol 91 (4) ◽  
pp. 2553-2555 ◽  
Author(s):  
Jun Shao ◽  
Achim Dörnen ◽  
Rolf Winterhoff ◽  
Ferdinand Scholz
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Effective Mass ◽  
Exciton Binding Energy

Photoreflectance study of hydrogenated (InGa)(AsN)/GaAs heterostructures

2002 ◽  
Vol 744 ◽  
Author(s):  
M. Geddo ◽  
G. Guizzetti ◽  
R. Pezzuto ◽  
A. Polimeni ◽  
M. Capizzi ◽  
...  
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Heavy Hole ◽  
Energy Transition ◽  
Blue Shift ◽  
Spectral Features ◽  
Single Quantum ◽  
Electron Effective Mass ◽  
Gaas Substrates

ABSTRACTWe report on photoreflectance measurements performed in the 0.8–1.6 eV photon energy range in as grown and hydrogenated InxGa1-xAs1-yNy/GaAs single quantum wells grown on GaAs substrates by molecular beam epitaxy. In the hydrogenated samples, a blue-shift of all the QW spectral features and a surprising change with temperature in the nature of the lowest energy transition are found. These features are related to the interaction of H with N atoms. An increase in the binding energy of the heavy-hole exciton upon N introduction into the InxGa1-xAs lattice has been measured also and explained in terms of an increase in the electron effective mass.

Theoretical and experimental study of the excitonic binding energy in GaAs/AlGaAs single and coupled double quantum wells

2013 ◽  
Vol 144 ◽  
pp. 98-104 ◽  
Author(s):  
E.M. Lopes ◽  
D.F. César ◽  
F. Franchello ◽  
J.L. Duarte ◽  
I.F.L. Dias ◽  
...  
Keyword(s):  
Experimental Study ◽  
Binding Energy ◽  
Quantum Wells ◽  
Double Quantum

Magneto-optical determination of the exciton binding energy in GaAs quantum wells

1986 ◽  
Vol 174 (1-3) ◽  
pp. A433
Author(s):  
W. Ossau ◽  
B. Jäkel ◽  
E. Bangert ◽  
G. Landwehr ◽  
G. Weimann
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Exciton Binding Energy ◽  
Optical Determination
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