AbstractWe have measured the photoluminescence decay time of the bound excitons at the neutral nitrogen donors in the 6H and 3C polytypes of SiC. At 2K the decay times are 8.0 ns, 1.8 ns and 1.5 ns, for the P, R and S bound excitons in 6H SiC. For the nitrogen exciton in 3C, we find a decay time of 160 ns. These values are faster than previously reported for shallow donors in other indirect bandgap materials such as Si or GaP. Each of the observed decay times is found to be independent of the doping level in the sample, is temperature independent at low temperatures but decrease when the bound excitons are thermally ionised. The decay time related to different donor levels in 6H exhibits a strong dependence on the donor binding energy. We suggest that the dominant mechanism responsible for the observed decay time is a phonon-less Auger process. In high-purity 6H samples we have also measured the free exciton decay time at low temperatures to be 12 ns.
Influence of carrier localization at the core/shell interface on the temperature dependence of the Stokes shift and the photoluminescence decay time in CdTe/CdS type-II quantum dots