.In this research, ZnCuInS/ZnSe/ZnS quantum dots (QDs) have been studied as an excellent red emitting source for blue GaN LED because of its non-toxic deep red emmission, and large Stokes shift properties. In the paper ZnCuInS/ZnSe/ZnS core/shell quantum dots were prepared with the particle size of 4.5nm. According to the measurement of photoluminescence spectrum emitted by ZnCuInS/ZnSe/ZnS core/shell quantum dots, the emitting peak of 700 nm and the full was achieved as red emitter.It was found that absorption edge and photoluminescence peak shifted to shorter wavelength with decreasing the nanocrystal size due to quantum size effect.Meanwhile, we were prepared ZnCuInS/ZnSe/ZnS core/shell quantum dot light emitting diodes and their photoluminescence properties were studied. After the suitable bias was applied on the films, increasing the ZnCuInS/ZnSe/ZnS QDs concentration in the blue GaN chips, red emission increased with decreasing LED’s blue light.
Influence of carrier localization at the core/shell interface on the temperature dependence of the Stokes shift and the photoluminescence decay time in CdTe/CdS type-II quantum dots