Scattering of hot excitons due to optical phonons in quantum wells: Multiphonon resonant Raman process

2002 ◽  
Vol 65 (11) ◽  
Author(s):  
C. Trallero-Giner ◽  
Fernando de León-Pérez ◽  
Meng Lu ◽  
Joseph L. Birman
Keyword(s):  
Quantum Wells ◽  
Optical Phonons ◽  
Raman Process ◽  
Resonant Raman

RESONANT RAMAN SCATTERING AND EXCITON-PHONON INTERACTION IN CdTe / (Cd,Mn)Te QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-345-C5-348
Author(s):  
S.-K. CHANG ◽  
H. NAKATA ◽  
A. V. NURMIKKO ◽  
L. A. KOLODZIEJSKI ◽  
R. L. GUNSHOR
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Phonon Interaction ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Generation of TeraHertz radiation assisted by optical phonons in nitride-based quantum wells and heterolayers

2008 ◽  
Vol 5 (1) ◽  
pp. 236-239
Author(s):  
P. Shiktorov ◽  
E. Starikov ◽  
V. Gružinskis ◽  
L. Varani ◽  
C. Palermo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Terahertz Radiation ◽  
Optical Phonons

scholarly journals Многократное изменение электрон-фононного взаимодействия в квантовых ямах с диэлектрически различными барьерами

2022 ◽  
Vol 56 (1) ◽  
pp. 101
Author(s):  
А.Ю. Маслов ◽  
О.В. Прошина
Keyword(s):  
Quantum Wells ◽  
Charged Particles ◽  
Strong Interactions ◽  
Asymmetric Structure ◽  
Optical Phonons ◽  
Phonon Modes ◽  
Phonon Interaction ◽  
Barrier Materials ◽  
Electron Phonon Interaction ◽  
Order Of Magnitude

Abstract The specific features of the interaction of charged particles with polar optical phonons have been studied theoretically for quantum wells with the barriers that are asymmetric in their dielectric properties. It is shown that the interaction with interface phonon modes makes the greatest contribution in narrow quantum wells. The parameters of the electron-phonon interaction were found for the cases of different values of the phonon frequencies in the barrier materials. It turned out that a significant (by almost an order of magnitude) change in the parameters of the electron-phonon interaction can occur in such structures. This makes it possible, in principle, to trace the transition from weak to strong interactions in quantum wells of the same type but with different compositions of barrier materials. The conditions are found under which an enhancement of the electron-phonon interaction is possible in an asymmetric structure in comparison with a symmetric one with the barriers of the same composition.

Triply resonant Raman scattering via nonequilibrium phonons in GaAs quantum wells

1992 ◽  
Vol 45 (12) ◽  
pp. 6769-6775 ◽  
Author(s):  
Y. Liu ◽  
R. Sooryakumar ◽  
Emil S. Koteles ◽  
B. Elman
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Free-carrier screening of the interaction between excitons and longitudinal-optical phonons inInxGa1−xAs-InP quantum wells

1987 ◽  
Vol 35 (11) ◽  
pp. 5925-5928 ◽  
Author(s):  
M. S. Skolnick ◽  
K. J. Nash ◽  
P. R. Tapster ◽  
D. J. Mowbray ◽  
S. J. Bass ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Longitudinal Optical ◽  
Carrier Screening ◽  
Free Carrier ◽  
Optical Phonons
Sign in / Sign up

Export Citation Format

Share Document