Anomalous Hall effect ofNd0.7Sr0.3MnO3films with large magnetoresistance ratio: Evidence of Berry phase effect

2001 ◽  
Vol 64 (17) ◽  
Author(s):  
H. C. Yang ◽  
L. M. Wang ◽  
H. E. Horng
Keyword(s):  
Hall Effect ◽  
Berry Phase ◽  
Anomalous Hall Effect ◽  
Phase Effect ◽  
Magnetoresistance Ratio

scholarly journals Interface-induced sign reversal of the anomalous Hall effect in magnetic topological insulator heterostructures

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fei Wang ◽  
Xuepeng Wang ◽  
Yi-Fan Zhao ◽  
Di Xiao ◽  
Ling-Jie Zhou ◽  
...  
Keyword(s):  
Hall Effect ◽  
Electric Fields ◽  
First Principles ◽  
Berry Phase ◽  
Condensed Matter ◽  
Anomalous Hall Effect ◽  
First Principles Calculations ◽  
Sign Reversal ◽  
Berry Curvature ◽  
Topological Materials

AbstractThe Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.

scholarly journals Anomalous Hall effect and Berry phase in two-dimensional magnetic structures

2008 ◽  
Vol 104 ◽  
pp. 012018 ◽  
Author(s):  
V K Dugaev ◽  
J Barnaś ◽  
M Taillefumier ◽  
B Canals ◽  
C Lacroix ◽  
...  
Keyword(s):  
Hall Effect ◽  
Berry Phase ◽  
Anomalous Hall Effect ◽  
Two Dimensional ◽  
Magnetic Structures

scholarly journals Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
L. N. Oveshnikov ◽  
V. A. Kulbachinskii ◽  
A. B. Davydov ◽  
B. A. Aronzon ◽  
I. V. Rozhansky ◽  
...  
Keyword(s):  
Hall Effect ◽  
Berry Phase ◽  
Magnetic Semiconductor ◽  
Anomalous Hall Effect ◽  
Semiconductor Structure ◽  
Two Dimensional

scholarly journals Gauge fields in real and momentum spaces in magnets: monopoles and skyrmions

2012 ◽  
Vol 370 (1981) ◽  
pp. 5806-5819 ◽  
Author(s):  
N. Nagaosa ◽  
X. Z. Yu ◽  
Y. Tokura
Keyword(s):  
Hall Effect ◽  
Gauge Field ◽  
Berry Phase ◽  
Solid Angle ◽  
Spontaneous Magnetization ◽  
Anomalous Hall Effect ◽  
Magnetic Monopoles ◽  
Real Space ◽  
Gauge Fields ◽  
Quantum Mechanical

Electronic states in magnets are characterized by the quantum mechanical Berry phase defined in both the real and momentum spaces. This Berry phase constitutes the gauge fields, i.e. the emergent electromagnetic fields in solids, and affects the motion of the electrons. In momentum space, the band crossings act as the magnetic monopoles, i.e. the sources or sinks of the gauge flux. In real space, the spin textures with non-coplanar spin configurations produce the gauge field by the solid angle leading to the spin chirality. Skyrmion is the representative structure supporting this gauge field. A typical phenomenon reflecting this gauge field is the anomalous Hall effect, i.e. the Hall effect produced by the spontaneous magnetization combined with the relativistic spin–orbit interaction. We discuss a few examples recently studied related to these issues with some new results on skyrmion formation.

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