Nitrogen bonding structure in carbon nitride thin films studied by soft x-ray spectroscopy

2001 ◽  
Vol 79 (26) ◽  
pp. 4348-4350 ◽  
Author(s):  
Niklas Hellgren ◽  
Jinghua Guo ◽  
Conny Såthe ◽  
Akane Agui ◽  
Joseph Nordgren ◽  
...  
Keyword(s):  
Thin Films ◽  
Carbon Nitride ◽  
X Ray ◽  
Bonding Structure

Effect of substrate bias on the bonding structure of carbon nitride thin films

1999 ◽  
Vol 355-356 ◽  
pp. 85-88 ◽  
Author(s):  
A.K.M.S. Chowdhury ◽  
D.C. Cameron ◽  
M.A. Monclus
Keyword(s):  
Thin Films ◽  
Carbon Nitride ◽  
Substrate Bias ◽  
Bonding Structure

Correlation between bonding structure and mechanical properties of amorphous carbon nitride thin films

2000 ◽  
Vol 125 (1-3) ◽  
pp. 284-288 ◽  
Author(s):  
C. Quirós ◽  
R. Núñez ◽  
P. Prieto ◽  
I. Vergara ◽  
D. Cáceres ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Bonding Structure ◽  
Amorphous Carbon Nitride

Studies of Carbon Nitride Thin Films Synthesized by KrF Excimer Ablation of Graphite in Nitrogen Atmosphere

1998 ◽  
Vol 526 ◽  
Author(s):  
Z.M. Ren ◽  
Y.F. Lu ◽  
W.D. Song ◽  
D.S.H. Chan ◽  
T.S. Low ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Nitrogen Pressure ◽  
Laser Wavelength ◽  
Nitrogen Atmosphere ◽  
Amorphous Semiconductor ◽  
X Ray ◽  
Krf Excimer Laser

AbstractCarbon nitride thin films were deposited on silicon wafers by pulsed KrF excimer laser (wavelength 248 nm, duration 23 ns) ablation of graphite in nitrogen atmosphere. Different fluences of the excimer laser and pressures of the nitrogen atmosphere were used in order to achieve a high nitrogen content in the deposited thin films. Fourier Transform Infra-red (FTIR) and X-ray photoelectron spectroscopy (XPS) were used to identify the binding structure and the content of the nitrogen species in the deposited thin films. The highest N/C ratio 0.42 was achieved at an excimer laser fluence of 0.8 Jcm -2with a repetition rate of 10 Hz under the nitrogen pressure of PN=100 mTorr. A high content of C=N double bond instead of C-N triple bond was indicated in the deposited thin films. Ellipsometry was used to analyze the optical properties of the deposited thin films. The carbon nitride thin films have amorphous-semiconductor-like characteristics with the optical band gap Eop, as high as 0.42 eV.

Effects of Irradiation by Low Energy Nitrogen Ions on Carbon Nitride Thin Films

2002 ◽  
Vol 750 ◽  
Author(s):  
Yuka Nasu ◽  
Masami Aono ◽  
Shinichiro Aizawa ◽  
Nobuaki Kitazawa ◽  
Yoshihisa Watanabe
Keyword(s):  
Thin Films ◽  
Nitrogen Content ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Chemical Vapor ◽  
Low Energy ◽  
Carbon Filament ◽  
X Ray ◽  
Nitrogen Ions

ABSTRACTCarbon nitride (CNx) thin films have been prepared by hot carbon filament chemical vapor deposition, and the nitrogen content in the films is approximately 0.05. The CNx films have been irradiated by 0.1 keV nitrogen ions to increase the nitrogen content after deposition. The nitrogen content in the CNx films was obtained with X-ray photoelectron spectroscopy. Scanning electron microscopy was employed to study microstructures of the films. The experimental results show that nitrogen ions are chemically combined with the CNx films and as a result the nitrogen content increases up to approximately 0.30. Furthermore, it is found that nitrogen ions change the film microstructures and sputter the surfaces of CNx films.

Thermal stability of carbon nitride thin films

2001 ◽  
Vol 16 (11) ◽  
pp. 3188-3201 ◽  
Author(s):  
Niklas Hellgren ◽  
Nian Lin ◽  
Esteban Broitman ◽  
Virginie Serin ◽  
Stefano E. Grillo ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Thermal Stability ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Amorphous Structure ◽  
X Ray ◽  
Bonding Structure ◽  
Higher Temperature ◽  
Electron Energy Loss ◽  
Thermal Stability Of

The thermal stability of carbon nitride films, deposited by reactive direct current magnetron sputtering in N2 discharge, was studied for postdeposition annealing temperatures TA up to 1000 °C. Films were grown at temperatures of 100 °C (amorphous structure) and 350 and 550 °C (fullerenelike structure) and were analyzed with respect to thickness, composition, microstructure, bonding structure, and mechanical properties as a function of TA and annealing time. All properties investigated were found to be stable for annealing up to 300 °C for long times (>48 h). For higher TA, nitrogen is lost from the films and graphitization takes place. At TA = 500 °C the graphitization process takes up to 48 h while at TA = 900 °C it takes less than 2 min. A comparison on the evolution of x-ray photoelectron spectroscopy, electron energy loss spectroscopy and Raman spectra during annealing shows that for TA > 800 °C, preferentially pyridinelike N and –C≡N is lost from the films, mainly in the form of molecular N2 and C2N2, while N substituted in graphite is preserved the longest in the structure. Films deposited at the higher temperature exhibit better thermal stability, but annealing at temperatures a few hundred degrees Celsius above the deposition temperature for long times is always detrimental for the mechanical properties of the films.

SEMICONDUCTING AMORPHOUS CAMPHORIC CARBON NITRIDE THIN FILMS

2005 ◽  
Vol 12 (04) ◽  
pp. 587-595 ◽  
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO ◽  
M. UMENO ◽  
M. SHARON
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Nitrogen Content ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Amorphous Structure ◽  
Nitrogen Gas ◽  
Force Microscopy ◽  
Bonding Structure ◽  
High Electrical Resistivity

Amorphous carbon nitride ( a-CN x) films have been deposited by pulsed laser deposition at 0.8 Torr nitrogen gas ambient with varying substrate temperature from 20 to 500°C. The effects of the substrate temperature and ambient nitrogen gas pressure on the surface morphology, composition, nitrogen content, structure, and electrical properties of the a-CN x thin films have been investigated. The deposited a-CN x films were characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, Fourier transform infrared (FTIR), scanning electron microscopy (SEM), atomic force microscopy (AFM), UV-Visible transmittance, and four-probe resistance measurement. It is found that the amorphous structure of a-CN x films can be changed by the substrate temperature (ST) and the a-CN x films with high nitrogen content have relatively high electrical resistivity. Also, graphitization is found to cause the reduction of nitrogen content and changes in the bonding structure of nitrogen atoms in the films.

Raman and X-ray photoelectron spectroscopy study of carbon nitride thin films

1999 ◽  
Vol 151 (3-4) ◽  
pp. 233-238 ◽  
Author(s):  
P Petrov ◽  
D.B Dimitrov ◽  
D Papadimitriou ◽  
G Beshkov ◽  
V Krastev ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Spectroscopy Study ◽  
X Ray
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