Effect of band anticrossing on the optical transitions inGaAs1−xNx/GaAsmultiple quantum wells

2001 ◽  
Vol 64 (8) ◽  
Author(s):  
J. Wu ◽  
W. Shan ◽  
W. Walukiewicz ◽  
K. M. Yu ◽  
J. W. Ager ◽  
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Vol 21 (4) ◽  
pp. 462-466 ◽  
Author(s):  
L P Avakyants ◽  
P Yu Bokov ◽  
A V Chervyakov ◽  
G B Galiev ◽  
E A Klimov ◽  
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1988 ◽  
Vol 27 (Part 2, No. 3) ◽  
pp. L300-L303 ◽  
Author(s):  
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Kosei Takahashi ◽  
Takahiro Suyama ◽  
Masafumi Kondo ◽  
Saburo Yamamoto ◽  
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2004 ◽  
Vol 84 (18) ◽  
pp. 3453-3455 ◽  
Author(s):  
R. Kudrawiec ◽  
G. Se̢k ◽  
K. Ryczko ◽  
J. Misiewicz ◽  
J. C. Harmand

JETP Letters ◽  
2013 ◽  
Vol 97 (3) ◽  
pp. 159-162 ◽  
Author(s):  
A. I. Yakimov ◽  
V. V. Kirienko ◽  
V. A. Timofeev ◽  
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1999 ◽  
Vol 30 (4-5) ◽  
pp. 433-437 ◽  
Author(s):  
J.M Feng ◽  
M Tateuchi ◽  
K Asai ◽  
M Uwani ◽  
P.O Vaccaro ◽  
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