Reply to “Comment on ‘Correlation of x-ray absorption and x-ray photoemission spectroscopies in amorphous carbon nitride’ ”

2001 ◽  
Vol 64 (1) ◽  
Author(s):  
J. M. Ripalda ◽  
E. Román ◽  
N. Díaz ◽  
L. Galán ◽  
I. Montero ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Carbon Nitride ◽  
X Ray ◽  
Amorphous Carbon Nitride ◽  
X Ray Absorption

Comment on “Correlation of x-ray absorption and x-ray photoemission spectroscopies in amorphous carbon nitride”

2001 ◽  
Vol 64 (1) ◽  
Author(s):  
W. T. Zheng ◽  
Y. Sakamoto ◽  
J. H. Guo ◽  
X. T. Li ◽  
P. J. Cao ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Carbon Nitride ◽  
X Ray ◽  
Amorphous Carbon Nitride ◽  
X Ray Absorption

Correlation of x-ray absorption and x-ray photoemission spectroscopies in amorphous carbon nitride

1999 ◽  
Vol 60 (6) ◽  
pp. R3705-R3708 ◽  
Author(s):  
J. M. Ripalda ◽  
E. Román ◽  
N. Díaz ◽  
L. Galán ◽  
I. Montero ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Carbon Nitride ◽  
X Ray ◽  
Amorphous Carbon Nitride ◽  
X Ray Absorption

Correlation between N 1s core level x-ray photoelectron and x-ray absorption spectra of amorphous carbon nitride films

2000 ◽  
Vol 77 (6) ◽  
pp. 803-805 ◽  
Author(s):  
C. Quirós ◽  
J. Gómez-Garcı́a ◽  
F. J. Palomares ◽  
L. Soriano ◽  
E. Elizalde ◽  
...  
Keyword(s):  
Absorption Spectra ◽  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Core Level ◽  
X Ray ◽  
Amorphous Carbon Nitride ◽  
X Ray Absorption

X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES ON THE BONDING PROPERTIES OF AMORPHOUS CARBON NITRIDE FILMS SYNTHESIZED BY PULSED LASER DEPOSITION WITH DIFFERENT SUBSTRATE TEMPERATURES

2005 ◽  
Vol 12 (02) ◽  
pp. 185-195
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Pulsed Laser Deposition ◽  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Measurement Techniques ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Amorphous Carbon Nitride ◽  
Substrate Temperatures

Amorphous carbon nitride films ( a-CN x) were deposited by pulsed laser deposition of camphoric carbon target with different substrate temperatures (ST). The influence of ST on the synthesis of a-CN x films was investigated. The nitrogen-to-carbon (N/C) and oxygen-to-carbon (O/C) atomic ratios, bonding state, and microstructure of the deposited a-CN x films were characterized by X-ray photoelectron spectroscopy and were confirmed by other standard measurement techniques. The bonding states between C and N , and C and O in the deposited films were found to be significantly influenced by ST during the deposition process. The N/C and O/C atomic ratios of the a-CN x films reached the maximum value at 400°C. ST of 400°C was proposed to promote the desired sp 3-hybridized C and the C 3 N 4 phase. The C–N bonding of C–N , C=N and C≡N were observed in the films.

THE BONDING PROPERTIES OF AMORPHOUS CARBON NITRIDE FILMS BY THE MEANS OF X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES

2005 ◽  
Vol 19 (11) ◽  
pp. 1925-1942
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Measurement Techniques ◽  
Deposition Process ◽  
Atomic Ratio ◽  
X Ray ◽  
Bonding Properties ◽  
Amorphous Carbon Nitride ◽  
Spectroscopy Studies

Amorphous carbon nitride films (a -CN x) were deposited by pulsed laser deposition of camphoric carbon target at different substrate temperatures (ST). The influence of ST on the bonding properties of a -CN x films was investigated. The nitrogen to carbon (N/C) atomic ratio and oxygen to carbon (O/C) atomic ratio, bonding state and microstructure of the deposited a -CN x films were characterized by X-ray photoelectron spectroscopy and confirmed by other standard measurement techniques. The bonding states between the C and N, and C and O in the deposited films are found significantly influenced by the ST during deposition process. The N/C and O/C atomic ratio of the a -CN x films reached the maximum value at 400°C. The ST of 400°C was proposed to promote the desired sp3-hybridized C and the C 3 N 4 phase. The C–N bonding of C–N, C=N and C–N were observed in the deposited a -CN x films.

Study of Amorphous Carbon Nitride Films by X-ray Photoelectron Spectroscopy

1999 ◽  
Vol 6 (3) ◽  
pp. 161-167 ◽  
Author(s):  
Dihu Chen ◽  
Aixing Wei ◽  
S. P. Wong ◽  
Shaoqi Peng ◽  
R. W. M. Kwok
Keyword(s):  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
X Ray ◽  
Amorphous Carbon Nitride

Effect of Hydrogen on the Properties of Amorphous Carbon Nitride Films

2011 ◽  
Vol 383-390 ◽  
pp. 3298-3304 ◽  
Author(s):  
Eliška Mikmeková ◽  
Michal Urbánek ◽  
Tomáš Fořt ◽  
Rosa Di Mundo ◽  
Ondřej Caha
Keyword(s):  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Low Energy ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Low Energy Electron ◽  
Amorphous Carbon Nitride

The effect of hydrogen on the properties of amorphous carbon nitride films deposited onto Si substrates by magnetron sputtering device has been studied. The influence of hydrogen to roughness, porous character of films, composition and residual stress was investigated by atomic force microscopy, thermal desorption mass spectroscopy, X-ray photoelectron spectroscopy, scanning low energy electron microscopy and by goniometer equipped with Cu X-ray tube. The adding of hydrogen to nitrogen discharge a causes decrease in the high value of compressive stress (elimination of delamination of the films, increasing of nitrogen content in the bulk). On the other hand hydrogen increases roughness and porosity.

X-ray photoelectron spectroscopy studies of the effects of plasma etching on amorphous carbon nitride films

2002 ◽  
Vol 193 (1-4) ◽  
pp. 144-148 ◽  
Author(s):  
Liudi Jiang ◽  
A.G Fitzgerald ◽  
M.J Rose ◽  
R Cheung ◽  
B Rong ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
X Ray ◽  
Amorphous Carbon Nitride ◽  
Spectroscopy Studies
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