Correlation between N 1s core level x-ray photoelectron and x-ray absorption spectra of amorphous carbon nitride films

2000 ◽  
Vol 77 (6) ◽  
pp. 803-805 ◽  
Author(s):  
C. Quirós ◽  
J. Gómez-Garcı́a ◽  
F. J. Palomares ◽  
L. Soriano ◽  
E. Elizalde ◽  
...  
2001 ◽  
Vol 64 (1) ◽  
Author(s):  
W. T. Zheng ◽  
Y. Sakamoto ◽  
J. H. Guo ◽  
X. T. Li ◽  
P. J. Cao ◽  
...  

1999 ◽  
Vol 60 (6) ◽  
pp. R3705-R3708 ◽  
Author(s):  
J. M. Ripalda ◽  
E. Román ◽  
N. Díaz ◽  
L. Galán ◽  
I. Montero ◽  
...  

2005 ◽  
Vol 12 (02) ◽  
pp. 185-195
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO

Amorphous carbon nitride films ( a-CN x) were deposited by pulsed laser deposition of camphoric carbon target with different substrate temperatures (ST). The influence of ST on the synthesis of a-CN x films was investigated. The nitrogen-to-carbon (N/C) and oxygen-to-carbon (O/C) atomic ratios, bonding state, and microstructure of the deposited a-CN x films were characterized by X-ray photoelectron spectroscopy and were confirmed by other standard measurement techniques. The bonding states between C and N , and C and O in the deposited films were found to be significantly influenced by ST during the deposition process. The N/C and O/C atomic ratios of the a-CN x films reached the maximum value at 400°C. ST of 400°C was proposed to promote the desired sp 3-hybridized C and the C 3 N 4 phase. The C–N bonding of C–N , C=N and C≡N were observed in the films.


2003 ◽  
Vol 118 (8) ◽  
pp. 3748-3755 ◽  
Author(s):  
J. M. Ripalda ◽  
E. Román ◽  
L. Galán ◽  
I. Montero ◽  
S. Lizzit ◽  
...  

2005 ◽  
Vol 19 (11) ◽  
pp. 1925-1942
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO

Amorphous carbon nitride films (a -CN x) were deposited by pulsed laser deposition of camphoric carbon target at different substrate temperatures (ST). The influence of ST on the bonding properties of a -CN x films was investigated. The nitrogen to carbon (N/C) atomic ratio and oxygen to carbon (O/C) atomic ratio, bonding state and microstructure of the deposited a -CN x films were characterized by X-ray photoelectron spectroscopy and confirmed by other standard measurement techniques. The bonding states between the C and N, and C and O in the deposited films are found significantly influenced by the ST during deposition process. The N/C and O/C atomic ratio of the a -CN x films reached the maximum value at 400°C. The ST of 400°C was proposed to promote the desired sp3-hybridized C and the C 3 N 4 phase. The C–N bonding of C–N, C=N and C–N were observed in the deposited a -CN x films.


2001 ◽  
Vol 63 (1) ◽  
pp. 70-86 ◽  
Author(s):  
O Plashkevych ◽  
A Snis ◽  
L Yang ◽  
H Ågren ◽  
S F Matar

1999 ◽  
Vol 6 (3) ◽  
pp. 161-167 ◽  
Author(s):  
Dihu Chen ◽  
Aixing Wei ◽  
S. P. Wong ◽  
Shaoqi Peng ◽  
R. W. M. Kwok

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