Ion-beam-directed self-organization of conducting nanowire arrays

2001 ◽  
Vol 63 (23) ◽  
Author(s):  
M. Batzill ◽  
F. Bardou ◽  
K. J. Snowdon
2011 ◽  
Vol 1354 ◽  
Author(s):  
Jean Paul Allain ◽  
Osman El-Atwani ◽  
Alex Cimaroli ◽  
Daniel L. Rokusek ◽  
Sami Ortoleva ◽  
...  

ABSTRACTIon-beam sputtering (IBS) has been studied as a means for scalable, mask-less nanopatterning of surfaces. Patterning at the nanoscale has been achieved for numerous types of materials including: semiconductors, metals and insulators. Although much work has been focused on tailoring nanopatterning by systematic ion-beam parameter manipulation, limited work has addressed elucidating on the underlying mechanisms for self-organization of multi-component surfaces. In particular there has been little attention to correlate the surface chemistry variation during ion irradiation with the evolution of surface morphology and nanoscale self-organization. Moreover the role of surface impurities on patterning is not well known and characterization during the time-scale of modification remains challenging. This work summarizes an in-situ approach to characterize the evolution of surface chemistry during irradiation and its correlation to surface nanopatterning for a variety of multi-components surfaces. The work highlights the importance and role of surface impurities in nanopatterning of a surface during low-energy ion irradiation. In particular, it shows the importance of irradiation-driven mechanisms in GaSb(100) nanopatterning by low-energy ions and how the study of these systems can be impacted by oxide formation.


Nanomaterials ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 1031
Author(s):  
Michael Dasbach ◽  
Hendrik M. Reinhardt ◽  
Norbert A. Hampp

Laser-induced periodic surface structures (LIPSS) provide an elegant solution for the generation of highly ordered periodic patterns on the surface of solids. In this study, LIPSS are utilized for the formation of periodic platinum nanowire arrays. In a process based on laser-stimulated self-organization, platinum thin films, sputter-deposited onto silicon, are transformed into nanowire arrays with an average periodicity of 538 nm. The width of the platinum nanowires is adjustable in a range from 20 nm to 250 nm by simply adjusting the thickness of the initial platinum thin films in a range from 0.3 nm to 4.3 nm. With increasing width, platinum nanowires show a rising tendency to sink into the surface of the silicon wafer, thus indicating alloying between platinum and silicon upon LIPSS-formation by a nanosecond-pulsed laser. The Pt/silicon wires may be etched away, leaving a complementary nanostructure in the silicon surface.


2011 ◽  
Vol 8 (9) ◽  
pp. 2858-2861 ◽  
Author(s):  
Stjepan Lugomer ◽  
Zsolt Zolnai ◽  
Attila L. Tóth ◽  
István Bársony

2008 ◽  
Vol 20 (13) ◽  
pp. 2547-2551 ◽  
Author(s):  
Nai‐Wei Liu ◽  
Chih‐Yi Liu ◽  
Huai‐Hsien Wang ◽  
Chen‐Feng Hsu ◽  
Ming‐Yu Lai ◽  
...  

Author(s):  
N.N. Gerasimenko ◽  
N.S. Balakleyskiy ◽  
A.D. Volokhovskiy ◽  
D.I. Smirnov ◽  
O.A. Zaporozhan

AbstractWe present a method of Si–Ge QDs formation by ion beam implantation (IBI) technique and high temperature annealing for self-organization. Implantation doses varied from 10^14 to 10^17 cm^–2, ion energies ranged from 50 to 150 keV, annealing proceeded at temperature of 950 to 1050°C in argon environment. Formed QDs show strong infrared (IR) photoluminescence (PL) in the temperature region 15–250 K.


2001 ◽  
Vol 696 ◽  
Author(s):  
Alexandre Cuenat ◽  
Michael J. Aziz

AbstractWe study the formation and self-organization of “ripples” and “dots” spontaneously appearing during uniform irradiation of Si, Ge, and GaSb with energetic ion beams. Features have been produced both with sub-keV unfocused Ar+ ions and with a 30 keV Ga+ Focused Ion Beam. We follow the evolution of features from small amplitude to “nanospikes” with increasing ion dose. It appears that the edge of the sputtered region influences the patterns formed, an effect that may make it possible to guide the self-organization by the imposition of lateral boundary conditions on the sputter instability.


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