Photoluminescence of (111)InxGa1−xAs/GaAsstrained-layer quantum wells under hydrostatic pressure

2001 ◽  
Vol 63 (23) ◽  
Author(s):  
N. W. A. van Uden ◽  
J. R. Downes ◽  
D. J. Dunstan
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Wells

Exciton-related optical properties in zinc-blende GaN/InGaN quantum wells under hydrostatic pressure

2015 ◽  
Vol 252 (4) ◽  
pp. 670-677 ◽  
Author(s):  
C. M. Duque ◽  
A. L. Morales ◽  
M. E. Mora-Ramos ◽  
C. A. Duque
Keyword(s):  
Optical Properties ◽  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Zinc Blende ◽  
Ingan Quantum Wells

The Effects on Electric Field and Hydrostatic Pressure on the Doped Properties in a Strained (In,Ga)N-GaN Coupled Quantum Wells

2021 ◽  
Vol 16 (1) ◽  
pp. 97-103
Author(s):  
Xin-Nan Li ◽  
Guang-Xin Wang ◽  
Xiu-Zhi Duan
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Electric Field ◽  
Quantum Wells ◽  
Variational Approach ◽  
Coupled Quantum Wells ◽  
Zinc Blende ◽  
Impurity Interaction ◽  
The Right ◽  
Peak Value

A variational approach is utilized to investigated the electron-impurity interaction in zinc-blende (In,Ga)N-GaN strained coupled quantum wells. The donor imputrity states are studied in consideration of the effects of hydrostatic pressure and external electric field. Our results indicate that the binding energy visibly depends on hydrostatic pressure, strain of coupled quantum wells, and applied electric field. The binding energy demonstrates a peak value with the reduction of the left-well width, and which displays a minimum value with the increment of the middle-barrier width. A decreasing behavior on the binding energy is also demonstrated when the right-well width enhances. Also the binding energy augments constantly with the increasing hydrostatic pressure. Besides, the dependency of the binding energy on variation of impurity position has been analyzed detailedly.

Direct type II–indirect type I conversion of InP/GaAs/InP strained quantum wells induced by hydrostatic pressure

1991 ◽  
Vol 59 (7) ◽  
pp. 806-808 ◽  
Author(s):  
M. Gerling ◽  
M.‐E. Pistol ◽  
L. Samuelson ◽  
W. Seifert ◽  
J.‐O. Fornell ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Type I ◽  
Type Ii ◽  
Strained Quantum Wells

Universal behavior of photoluminescence in GaN-based quantum wells under hydrostatic pressure governed by built-in electric field

2012 ◽  
Vol 112 (5) ◽  
pp. 053509 ◽  
Author(s):  
T. Suski ◽  
S. P. Łepkowski ◽  
G. Staszczak ◽  
R. Czernecki ◽  
P. Perlin ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Electric Field ◽  
Quantum Wells ◽  
Universal Behavior
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