Universal behavior of photoluminescence in GaN-based quantum wells under hydrostatic pressure governed by built-in electric field

2012 ◽  
Vol 112 (5) ◽  
pp. 053509 ◽  
Author(s):  
T. Suski ◽  
S. P. Łepkowski ◽  
G. Staszczak ◽  
R. Czernecki ◽  
P. Perlin ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Electric Field ◽  
Quantum Wells ◽  
Universal Behavior

The Effects on Electric Field and Hydrostatic Pressure on the Doped Properties in a Strained (In,Ga)N-GaN Coupled Quantum Wells

2021 ◽  
Vol 16 (1) ◽  
pp. 97-103
Author(s):  
Xin-Nan Li ◽  
Guang-Xin Wang ◽  
Xiu-Zhi Duan
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Electric Field ◽  
Quantum Wells ◽  
Variational Approach ◽  
Coupled Quantum Wells ◽  
Zinc Blende ◽  
Impurity Interaction ◽  
The Right ◽  
Peak Value

A variational approach is utilized to investigated the electron-impurity interaction in zinc-blende (In,Ga)N-GaN strained coupled quantum wells. The donor imputrity states are studied in consideration of the effects of hydrostatic pressure and external electric field. Our results indicate that the binding energy visibly depends on hydrostatic pressure, strain of coupled quantum wells, and applied electric field. The binding energy demonstrates a peak value with the reduction of the left-well width, and which displays a minimum value with the increment of the middle-barrier width. A decreasing behavior on the binding energy is also demonstrated when the right-well width enhances. Also the binding energy augments constantly with the increasing hydrostatic pressure. Besides, the dependency of the binding energy on variation of impurity position has been analyzed detailedly.

Influence of hydrostatic pressure on the built-in electric field in ZnO/ZnMgO quantum wells

2016 ◽  
Vol 119 (21) ◽  
pp. 215702 ◽  
Author(s):  
Henryk Teisseyre ◽  
Agata Kaminska ◽  
Stefan Birner ◽  
Toby D. Young ◽  
Andrzej Suchocki ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Electric Field ◽  
Quantum Wells

BINDING ENERGY FOR A SHALLOW DONOR IMPURITY IN GaAs–(Ga, Al)As QUANTUM WELLS UNDER HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1753-1756 ◽  
Author(s):  
A. MONTES ◽  
A. L. MORALES ◽  
C. A. DUQUE
Keyword(s):  
Wave Function ◽  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Electric Field ◽  
Quantum Wells ◽  
Applied Electric Field ◽  
Shallow Donor ◽  
Donor Impurity ◽  
External Hydrostatic Pressure ◽  
Mass Approximation

The present work investigates the effects of the hydrostatic pressure and the external applied electric field on the binding energy for shallow donor impurities in GaAs–Ga 1 - x Al x As quantum wells. The effective mass approximation is used and a trial envelope wave function is adopted for the impurity carrier. For fixed well width and applied electric field, the binding energy of the shallow donor impurity is enhanced by increasing the external hydrostatic pressure, and for fixed well width and hydrostatic pressure, the binding energy decreases by increasing the external electric field.

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