scholarly journals Three-dimensional band mapping by angle-dependent very-low-energy electron diffraction and photoemission: Methodology and application to Cu

2001 ◽  
Vol 63 (20) ◽  
Author(s):  
V. N. Strocov ◽  
R. Claessen ◽  
G. Nicolay ◽  
S. Hüfner ◽  
A. Kimura ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Three Dimensional ◽  
Low Energy ◽  
Energy Electron ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron ◽  
Band Mapping

THREE-DIMENSIONAL BAND MAPPING BY COMBINED VERY-LOW-ENERGY ELECTRON DIFFRACTION AND PHOTOEMISSION

2002 ◽  
Vol 09 (02) ◽  
pp. 1275-1280
Author(s):  
V. N. STROCOV ◽  
R. CLAESSEN ◽  
H. I. STARNBERG ◽  
P. O. NILSSON ◽  
G. NICOLAY ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Wave Vector ◽  
Crystal Surface ◽  
Three Dimensional ◽  
Low Energy ◽  
Energy Electron ◽  
Final States ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron ◽  
Band Mapping

Resolving the 3D wave vector k in photoemission mapping of the band structure E( k ) requires knowledge of the unoccupied final states. Both dispersions and lifetimes of these states can be achieved by very-low-energy electron diffraction (VLEED). By incorporating the non-free-electron and excited-state effects in the final states, combining VLEED with photoemission provides accurate mapping of the valence E( k ) resolved in the 3D wave vector and under control of the intrinsic accuracy. We here concentrate on the most accurate combined method which uses angle-dependent VLEED and photoemission measurements. It provides access to many Brillouin-zone lines using one crystal surface, and benefits from an intensity gain and a better intrinsic accuracy near the Fermi level.

ATOMIC STRUCTURE OF Si(113) 3×1-H BY DYNAMICAL LOW-ENERGY ELECTRON DIFFRACTION INTENSITY SPECTRA ANALYSIS

1994 ◽  
Vol 01 (02n03) ◽  
pp. 221-227 ◽  
Author(s):  
H. HUANG ◽  
S.Y. TONG ◽  
U. MYLER ◽  
K. JACOBI
Keyword(s):  
Electron Diffraction ◽  
Three Dimensional ◽  
Low Energy ◽  
Energy Electron ◽  
Intensity Analysis ◽  
Diffraction Intensity ◽  
Spectra Analysis ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron ◽  
Atomic Coordinates

The Si ((113) 3×1-H structure has been investigated by a quantitative low-energy electron diffraction intensity analysis. A model with two Si dimers in the unit cell gives best agreement between the calculation and the experimental data. Three-dimensional atomic coordinates have been determined.

Three-dimensional unoccupied band structure of graphite: Very-low-energy electron diffraction and band calculations

2000 ◽  
Vol 61 (7) ◽  
pp. 4994-5001 ◽  
Author(s):  
V. N. Strocov ◽  
P. Blaha ◽  
H. I. Starnberg ◽  
M. Rohlfing ◽  
R. Claessen ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Band Structure ◽  
Three Dimensional ◽  
Low Energy ◽  
Energy Electron ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron

scholarly journals Absolute Band Mapping by Combined Angle-Dependent Very-Low-Energy Electron Diffraction and Photoemission: Application to Cu

1998 ◽  
Vol 81 (22) ◽  
pp. 4943-4946 ◽  
Author(s):  
V. N. Strocov ◽  
R. Claessen ◽  
G. Nicolay ◽  
S. Hüfner ◽  
A. Kimura ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Low Energy ◽  
Energy Electron ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron ◽  
Band Mapping

Low-Energy-Electron-Diffraction Structural Studies of (100) Cleavage Surfaces of In4Se3 Layered Crystals

2014 ◽  
Vol 59 (6) ◽  
pp. 612-621 ◽  
Author(s):  
P.V. Galiy ◽  
◽  
Ya.B. Losovyj ◽  
T.M. Nenchuk ◽  
I.R. Yarovets’ ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Low Energy ◽  
Energy Electron ◽  
Structural Studies ◽  
Low Energy Electron Diffraction ◽  
Layered Crystals ◽  
Low Energy Electron
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