Application of a Variational Principle to the Calculation of Low-Energy Electron Diffraction Intensities. II. The Generalized Formalism of Three-Dimensional Problems

1971 ◽  
Vol 3 (12) ◽  
pp. 4189-4199 ◽  
Author(s):  
A. P. Shen ◽  
J. B. Krieger
1994 ◽  
Vol 01 (02n03) ◽  
pp. 221-227 ◽  
Author(s):  
H. HUANG ◽  
S.Y. TONG ◽  
U. MYLER ◽  
K. JACOBI

The Si ((113) 3×1-H structure has been investigated by a quantitative low-energy electron diffraction intensity analysis. A model with two Si dimers in the unit cell gives best agreement between the calculation and the experimental data. Three-dimensional atomic coordinates have been determined.


2000 ◽  
Vol 61 (7) ◽  
pp. 4994-5001 ◽  
Author(s):  
V. N. Strocov ◽  
P. Blaha ◽  
H. I. Starnberg ◽  
M. Rohlfing ◽  
R. Claessen ◽  
...  

2002 ◽  
Vol 09 (02) ◽  
pp. 1275-1280
Author(s):  
V. N. STROCOV ◽  
R. CLAESSEN ◽  
H. I. STARNBERG ◽  
P. O. NILSSON ◽  
G. NICOLAY ◽  
...  

Resolving the 3D wave vector k in photoemission mapping of the band structure E( k ) requires knowledge of the unoccupied final states. Both dispersions and lifetimes of these states can be achieved by very-low-energy electron diffraction (VLEED). By incorporating the non-free-electron and excited-state effects in the final states, combining VLEED with photoemission provides accurate mapping of the valence E( k ) resolved in the 3D wave vector and under control of the intrinsic accuracy. We here concentrate on the most accurate combined method which uses angle-dependent VLEED and photoemission measurements. It provides access to many Brillouin-zone lines using one crystal surface, and benefits from an intensity gain and a better intrinsic accuracy near the Fermi level.


Sign in / Sign up

Export Citation Format

Share Document