Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds

2001 ◽  
Vol 63 (16) ◽  
Author(s):  
L. E. Ramos ◽  
L. K. Teles ◽  
L. M. R. Scolfaro ◽  
J. L. P. Castineira ◽  
A. L. Rosa ◽  
...  
Keyword(s):  
Effective Mass ◽  
Group Iii ◽  
Zinc Blende ◽  
Mass Properties ◽  
Nitride Semiconductor ◽  
Semiconductor Compounds ◽  
Group Iii Nitride

NbN Capping Layer for Enhanced Thermal Processing of Group III-Nitride Semiconductor Devices

2016 ◽  
Vol 6 (2) ◽  
pp. Q3067-Q3070 ◽  
Author(s):  
J. D. Greenlee ◽  
A. Nath ◽  
T. J. Anderson ◽  
B. N. Feigelson ◽  
A. D. Koehler ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Semiconductor Devices ◽  
Capping Layer ◽  
Group Iii ◽  
Nitride Semiconductor ◽  
Group Iii Nitride

scholarly journals The Quantum Calculation for Valence Band Structure of Strained Zinc-blende GaN Using Six-Band Based k·p Method

2021 ◽  
Vol 2065 (1) ◽  
pp. 012002
Author(s):  
Yaqun Liu ◽  
Everett X. Wang ◽  
Gary Zhang ◽  
Xiyue Li
Keyword(s):  
Valence Band ◽  
Quantum Confinement Effect ◽  
Hole Mobility ◽  
Uniaxial Stress ◽  
Carrier Distribution ◽  
Group Iii ◽  
Stress Effects ◽  
Zinc Blende ◽  
Group Iii Nitride ◽  
Strain Dependent

Abstract The variations of valence band energy with stress effects in zinc-blende GaN are proposed in this paper. The calculations are based on a six-band strain dependent k·p Hamiltonian, and can be self-consistently solved by Schrödinger-Poisson equation. Accurate physical pictures are given for the quantized valence subband structure under biaxial and uniaxial stress in (001) surface along the [110] direction accounting the quantum confinement effect. The warping of the energy profile results in carrier distribution change. This research will be beneficial for improving the hole mobility and the selective of optimum stress for group-III nitride semiconductor based devices.

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