Resonant donor defect as a cause of compensation inp-type ZnSe: Photoluminescence studies under hydrostatic pressure

2001 ◽  
Vol 63 (16) ◽  
Author(s):  
Igor L. Kuskovsky ◽  
G. F. Neumark ◽  
J. G. Tischler ◽  
B. A. Weinstein
Keyword(s):  
Hydrostatic Pressure ◽  
Photoluminescence Studies ◽  
Donor Defect

scholarly journals Photoluminescence Studies of GaN and AlGaN Layers Under Hydrostatic Pressure

1995 ◽  
Vol 378 ◽  
Author(s):  
C. Wetzel ◽  
W. Walukiewicz ◽  
E. E. Haller ◽  
H. Amano ◽  
I. Akasaki
Keyword(s):  
Hydrostatic Pressure ◽  
Energy Levels ◽  
Wide Bandgap ◽  
High Electron ◽  
Valence Band Edge ◽  
Native Defects ◽  
Free Carriers ◽  
High Electron Concentration ◽  
Localized Defects ◽  
Photoluminescence Studies

AbstractWide bandgap GaN very often shows a high electron concentration. Although several impurities such as O and Si have been identified, the concentration is not high enough to account for the number of free carriers. As a consequence native defects namely the nitrogen vacancies are widely considered to be present at high densities. Several calculations predict different energy levels of this strongly localized defect. We present photoluminescence experiments of wurtzite GaN and AlGaN layers under large hydrostatic pressure to search for localized defects within the questionable energy range of 3 .0 to 3 .8 eV above the valence band edge.

Photoluminescence studies on self-organized 1.55-μm InAs/InGaAsP/InP quantum dots under hydrostatic pressure

2014 ◽  
Vol 116 (2) ◽  
pp. 023510 ◽  
Author(s):  
P. Y. Zhou ◽  
X. M. Dou ◽  
X. F. Wu ◽  
K. Ding ◽  
S. Luo ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Hydrostatic Pressure ◽  
Self Organized ◽  
Photoluminescence Studies ◽  
Inp Quantum Dots

scholarly journals Photoluminescence studies of a GaAs-Ga1−xAlxAs superlattice at 8–300 K under hydrostatic pressure (0–70 kbar)

1985 ◽  
Vol 31 (6) ◽  
pp. 4106-4109 ◽  
Author(s):  
Umadevi Venkateswaran ◽  
Meera Chandrasekhar ◽  
H. R. Chandrasekhar ◽  
T. Wolfram ◽  
R. Fischer ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Photoluminescence Studies

Photoluminescence Studies of Diluted Magnetic Semiconductors Under Hydrostatic Pressure: Cd1−xMnxTe

1989 ◽  
Vol 161 ◽  
Author(s):  
Maneesha Prakash ◽  
Meera Chandrasekhar ◽  
H.R. Chandrasekhar ◽  
I. Miotkowski ◽  
A.K. Ramdas
Keyword(s):  
Hydrostatic Pressure ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Binding Energies ◽  
Magnetic Polaron ◽  
Photoluminescence Study ◽  
Bound Magnetic Polaron ◽  
Pressure Coefficients ◽  
Diluted Magnetic ◽  
Photoluminescence Studies

ABSTRACTWe present a photoluminescence study of the excitons and electron-to-acceptor (e-°) transitions in Cd1−xMnxTe (x = 0.05 and 0.15) under hydrostatic pressure at 15K. We investigate the changing magnetic and Coulombic binding energies of the e-° transition under pressure. We find that the e-° binding energy increases with pressure for x = 0.15 where the magnetic term due to the acceptor bound magnetic polaron is large, while it decreases for x = 0.05. We also obtain the pressure coefficients of the excitonic and acceptor related transitions.

scholarly journals PHOTOLUMINESCENCE STUDIES ON InxGa1-xAs-GaAs STRAINED QUANTUM WELLS STRUCTURE UNDER HYDROSTATIC PRESSURE

1989 ◽  
Vol 38 (7) ◽  
pp. 1086
Author(s):  
WANG LI-JUN ◽  
HOU HONG-QI ◽  
ZHOU JUN-MING ◽  
TANG RU-MING ◽  
LU ZHI-DONG ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Strained Quantum Wells ◽  
Photoluminescence Studies

scholarly journals Photoluminescence studies of erbium-doped GaAs under hydrostatic pressure

1997 ◽  
Vol 82 (1) ◽  
pp. 368-374 ◽  
Author(s):  
T. D. Culp ◽  
U. Hömmerich ◽  
J. M. Redwing ◽  
T. F. Kuech ◽  
K. L. Bray
Keyword(s):  
Hydrostatic Pressure ◽  
Erbium Doped ◽  
Photoluminescence Studies

Photoluminescence studies of 〈100〉 and 〈111〉InxGa1−xAs/GaAssingle quantum wells under hydrostatic pressure

1999 ◽  
Vol 59 (7) ◽  
pp. 5056-5063 ◽  
Author(s):  
T. Sauncy ◽  
M. Holtz ◽  
O. Brafman ◽  
D. Fekete ◽  
Y. Finkelstein
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Photoluminescence Studies

Photoluminescence studies ofInxGa1−xAs/GaAs strained quantum wells under hydrostatic pressure

1992 ◽  
Vol 45 (7) ◽  
pp. 3489-3493 ◽  
Author(s):  
Guo-Hua Li ◽  
Bao-Zhen Zheng ◽  
He-Xiang Han ◽  
Zhao-Ping Wang ◽  
T. G. Andersson ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Strained Quantum Wells ◽  
Photoluminescence Studies
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