Photoluminescence studies of 〈100〉 and 〈111〉InxGa1−xAs/GaAssingle quantum wells under hydrostatic pressure

1999 ◽  
Vol 59 (7) ◽  
pp. 5056-5063 ◽  
Author(s):  
T. Sauncy ◽  
M. Holtz ◽  
O. Brafman ◽  
D. Fekete ◽  
Y. Finkelstein
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Photoluminescence Studies

scholarly journals PHOTOLUMINESCENCE STUDIES ON InxGa1-xAs-GaAs STRAINED QUANTUM WELLS STRUCTURE UNDER HYDROSTATIC PRESSURE

1989 ◽  
Vol 38 (7) ◽  
pp. 1086
Author(s):  
WANG LI-JUN ◽  
HOU HONG-QI ◽  
ZHOU JUN-MING ◽  
TANG RU-MING ◽  
LU ZHI-DONG ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Strained Quantum Wells ◽  
Photoluminescence Studies

Photoluminescence studies ofInxGa1−xAs/GaAs strained quantum wells under hydrostatic pressure

1992 ◽  
Vol 45 (7) ◽  
pp. 3489-3493 ◽  
Author(s):  
Guo-Hua Li ◽  
Bao-Zhen Zheng ◽  
He-Xiang Han ◽  
Zhao-Ping Wang ◽  
T. G. Andersson ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Strained Quantum Wells ◽  
Photoluminescence Studies

Photoluminescence studies of GaAs-GaAlAs multiple quantum wells

1985 ◽  
Vol 2 (12) ◽  
pp. 529-532
Author(s):  
Xu Zhong-ying ◽  
Xu Ji-zong ◽  
Chen Zong-gui ◽  
Zhuang Wei-hua ◽  
Xu Jun-ying ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Studies

Exciton-related optical properties in zinc-blende GaN/InGaN quantum wells under hydrostatic pressure

2015 ◽  
Vol 252 (4) ◽  
pp. 670-677 ◽  
Author(s):  
C. M. Duque ◽  
A. L. Morales ◽  
M. E. Mora-Ramos ◽  
C. A. Duque
Keyword(s):  
Optical Properties ◽  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Zinc Blende ◽  
Ingan Quantum Wells

Photoluminescence Studies of [(CdSe)1(ZnSe)2]9-ZnSeTe Multiple Quantum Wells Under High Pressure

1994 ◽  
Vol 358 ◽  
Author(s):  
Z.P. Wang ◽  
Z.X. Liu ◽  
H.X. Han ◽  
J.Q. Zhang ◽  
G.H. Li ◽  
...  
Keyword(s):  
High Pressure ◽  
Quantum Wells ◽  
Liquid Nitrogen Temperature ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type I ◽  
Short Period ◽  
Heavy Hole Subband ◽  
Photoluminescence Studies ◽  
Increasing Temperature

ABSTRACTWe have performed photoluminescence (PL) measurements at liquid nitrogen temperature under high pressure up to 5.5 GPa and in the temperature range 10-300 K at atmospheric pressure on {(ZnSe)30(ZnSe0.92Te0.08)30(ZnSe)30[(CdSe)1(ZnSe)2]9}x5 multiple quantum wells. The PL peaks, EB, E1 and Ew corresponding to the band edge luminescence in ZnSe barrier layer, the transitions from the first conduction subband to the heavy-hole subband in ZnSe0.92Te0.08 layers and [(CdSe)1(ZnSe)2]9 ultra short period superlattice quantum well (SPSLQW) layers have been observed. Experimental results show that ZnSe0.92Te0.08/ZnSe forms a type-I superlattice (SL) in contrast to the type-II ZnSe/ZnTe SL. The pressure coefficients of the EB, E1 and Ew exciton peaks have been determined as 67, 63 and 56 meV/GPa, respectively. With increasing temperature (or pressure), the E1 peak-intensity drastically decreases which is attributed to the thermal effect (or the appearance of many defects in ZnSe0.92Te0.08 under higher pressure).

The Effects on Electric Field and Hydrostatic Pressure on the Doped Properties in a Strained (In,Ga)N-GaN Coupled Quantum Wells

2021 ◽  
Vol 16 (1) ◽  
pp. 97-103
Author(s):  
Xin-Nan Li ◽  
Guang-Xin Wang ◽  
Xiu-Zhi Duan
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Electric Field ◽  
Quantum Wells ◽  
Variational Approach ◽  
Coupled Quantum Wells ◽  
Zinc Blende ◽  
Impurity Interaction ◽  
The Right ◽  
Peak Value

A variational approach is utilized to investigated the electron-impurity interaction in zinc-blende (In,Ga)N-GaN strained coupled quantum wells. The donor imputrity states are studied in consideration of the effects of hydrostatic pressure and external electric field. Our results indicate that the binding energy visibly depends on hydrostatic pressure, strain of coupled quantum wells, and applied electric field. The binding energy demonstrates a peak value with the reduction of the left-well width, and which displays a minimum value with the increment of the middle-barrier width. A decreasing behavior on the binding energy is also demonstrated when the right-well width enhances. Also the binding energy augments constantly with the increasing hydrostatic pressure. Besides, the dependency of the binding energy on variation of impurity position has been analyzed detailedly.

scholarly journals Photoluminescence Studies of GaN and AlGaN Layers Under Hydrostatic Pressure

1995 ◽  
Vol 378 ◽  
Author(s):  
C. Wetzel ◽  
W. Walukiewicz ◽  
E. E. Haller ◽  
H. Amano ◽  
I. Akasaki
Keyword(s):  
Hydrostatic Pressure ◽  
Energy Levels ◽  
Wide Bandgap ◽  
High Electron ◽  
Valence Band Edge ◽  
Native Defects ◽  
Free Carriers ◽  
High Electron Concentration ◽  
Localized Defects ◽  
Photoluminescence Studies

AbstractWide bandgap GaN very often shows a high electron concentration. Although several impurities such as O and Si have been identified, the concentration is not high enough to account for the number of free carriers. As a consequence native defects namely the nitrogen vacancies are widely considered to be present at high densities. Several calculations predict different energy levels of this strongly localized defect. We present photoluminescence experiments of wurtzite GaN and AlGaN layers under large hydrostatic pressure to search for localized defects within the questionable energy range of 3 .0 to 3 .8 eV above the valence band edge.

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