Monte Carlo simulation of polycrystalline thin film deposition

2000 ◽  
Vol 63 (3) ◽  
Author(s):  
P. Bruschi ◽  
A. Nannini ◽  
F. Pieri
1998 ◽  
Vol 514 ◽  
Author(s):  
J. Emiliano Rubio ◽  
Martín Jaraíz ◽  
Luis A. BaiIón ◽  
Juan Barbolla ◽  
M José López ◽  
...  

ABSTRACTA new atomistic scheme for simulating polycrystalline thin film deposition based on a Monte Carlo approach has been developed. Simulations of polycrystalline aluminum deposition and annealing at different temperatures are presented. The time evolution of the film morphology for those temperatures is discussed. During deposition, columnar growth is observed at low temperatures. Grain growth takes place mainly during annealing. Faceting and selection of preferred crystal orientations (texture) is observed.


1995 ◽  
Vol 399 ◽  
Author(s):  
Rong-Fu Xiao

ABSTRACTWe have studied the reentrant growth in kinetic thin-film deposition on stepped surfaces using a Monte Carlo simulation. The results show that the reentrant oscillation of two dimensional nucleation growth occurs as a result of the variation of surface diffusion length with deposition temperature, and that it is a natural phenomenon in kinetic thin-film epitaxy on a substrate with a permanent step source.


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