Light-hole to heavy-hole acoustic phonon scattering rate

2000 ◽  
Vol 62 (12) ◽  
pp. 8114-8119 ◽  
Author(s):  
G. Sun ◽  
L. Friedman ◽  
R. A. Soref
Keyword(s):  
Acoustic Phonon ◽  
Heavy Hole ◽  
Phonon Scattering ◽  
Light Hole ◽  
Scattering Rate

Carrier-Phonon Scattering Rate and Charge Transport in Spherical and TMV Nanometric Viruses

2010 ◽  
Vol 12 ◽  
pp. 65-76
Author(s):  
Sanjeev K. Gupta ◽  
Prafulla K. Jha
Keyword(s):  
Charge Transport ◽  
Molecular Electronics ◽  
Acoustic Phonon ◽  
Absorption Rate ◽  
Phonon Scattering ◽  
Phonon Energy ◽  
Hole Energy ◽  
Scattering Rate

The present paper presents the carrier-acoustic phonon scattering rate and charge transport in spherical and TMV viruses. We demonstrate theoretically that the absorption rate changes according to the phonon energy while emission of phonon is limited by the both electron and hole energy. The obtained conductivity for spherical and TMV viruses suggest that the TMV virus is more conducting and therefore may be a good candidate for the connector or wire to be used in the nano- and molecular- electronics . The value of resistance obtained for TMV virus is lower than the resistance of DNA.

Hole Scattering in p-type Wurtzite Gallium Nitride

2001 ◽  
Vol 680 ◽  
Author(s):  
J. D. Albrecht ◽  
P. P. Ruden
Keyword(s):  
Gallium Nitride ◽  
Acoustic Phonon ◽  
Phonon Scattering ◽  
Final States ◽  
Hamiltonian Description ◽  
Scattering Rate ◽  
Transverse Acoustic ◽  
Valence Bands ◽  
P Type ◽  
Strong Scattering

ABSTRACTWe investigate acoustic phonon scattering processes for holes in wurtzite gallium nitride. Using a six-band Rashba-Sheka-Pikus Hamiltonian description of the valence bands of gallium nitride, total scattering rates are calculated by numerical integration over final states. An examination of the interband and intraband processes shows strong scattering rate anisotropy between holes moving parallel to and perpendicular to the hexagonal plane. Results are given for inelastic acoustic deformation potential and piezoelectric scattering processes involving both longitudinal and transverse acoustic phonon absorption.

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

Momentum relaxation of 2D electron gas due to near-surface acoustic phonon scattering

1999 ◽  
Vol 270 (3-4) ◽  
pp. 280-288 ◽  
Author(s):  
V.I. Pipa ◽  
N.Z. Vagidov ◽  
V.V. Mitin ◽  
M. Stroscio
Keyword(s):  
Acoustic Phonon ◽  
Phonon Scattering ◽  
Electron Gas ◽  
Near Surface ◽  
2D Electron Gas ◽  
Momentum Relaxation

Exciton binding energies in GaAs films on AlxGa1−xAs substrates

2015 ◽  
Vol 29 (30) ◽  
pp. 1550213 ◽  
Author(s):  
Zhenhua Wu ◽  
Lei Chen ◽  
Qiang Tian
Keyword(s):  
Film Thickness ◽  
Significant Influence ◽  
Heavy Hole ◽  
Dimensional Space ◽  
Light Hole ◽  
Binding Energies ◽  
Substrate Thickness ◽  
Dimensional Approach ◽  
Anisotropic System ◽  
Gaas Films

We use the fractional–dimensional approach (FDA) to study exciton binding energies in GaAs films on [Formula: see text] substrates. In this approach, the Schrödinger equation for a given anisotropic system is solved in a noninteger-dimensional space where the interactions are assumed to occur in an isotropic effective environment. The heavy-hole and light-hole exciton binding energies are calculated as functions of the film thickness and substrate thickness. The numerical results show that both the heavy-hole and light-hole exciton binding energies decrease monotonously as the film thickness increases. When the film thickness and the substrate thickness is relatively small, the change of substrate thickness has comparatively remarkable influence on both heavy-hole and light-hole exciton binding energies. As the substrate thickness increases, both the heavy-hole and light-hole exciton binding energies increase gradually. When the film thickness or the substrate thickness is relatively large, the change of substrate thickness has no significant influence on both heavy-hole and light-hole exciton binding energies.

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