Single-electron acoustic charge transport on shallow-etched channels in a perpendicular magnetic field

2000 ◽  
Vol 62 (3) ◽  
pp. 1564-1567 ◽  
Author(s):  
J. Cunningham ◽  
V. I. Talyanskii ◽  
J. M. Shilton ◽  
M. Pepper ◽  
A. Kristensen ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Charge Transport ◽  
Single Electron ◽  
Perpendicular Magnetic Field ◽  
Electron Acoustic ◽  
Acoustic Charge Transport

Single-electron acoustic charge transport by two counterpropagating surface acoustic wave beams

1999 ◽  
Vol 60 (7) ◽  
pp. 4850-4855 ◽  
Author(s):  
J. Cunningham ◽  
V. I. Talyanskii ◽  
J. M. Shilton ◽  
M. Pepper ◽  
M. Y. Simmons ◽  
...  
Keyword(s):  
Acoustic Wave ◽  
Charge Transport ◽  
Surface Acoustic Wave ◽  
Single Electron ◽  
Electron Acoustic ◽  
Acoustic Charge Transport

The effects of two counterpropagating surface acoustic wave beams on single electron acoustic charge transport

2010 ◽  
Vol 405 (1) ◽  
pp. 404-409 ◽  
Author(s):  
Jian-Hong He ◽  
Hua-Zhong Guo ◽  
Li Song ◽  
Wei Zhang ◽  
Jie Gao ◽  
...  
Keyword(s):  
Acoustic Wave ◽  
Charge Transport ◽  
Surface Acoustic Wave ◽  
Single Electron ◽  
Electron Acoustic ◽  
Acoustic Charge Transport

TRANSPARENCY OF NARROW CONSTRICTIONS IN A GRAPHENE SINGLE ELECTRON TRANSISTOR

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2647-2654 ◽  
Author(s):  
C. STAMPFER ◽  
E. SCHURTENBERGER ◽  
F. MOLITOR ◽  
J. GÜTTINGER ◽  
T. IHN ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electric Fields ◽  
Drain Current ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Perpendicular Magnetic Field ◽  
Current Saturation ◽  
Tunnel Barriers ◽  
Graphene Island ◽  
Charging Energy

We report on electronic transport experiments on a graphene single electron transistor as function of a perpendicular magnetic field. The device, which consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions is electronically characterized and the device exhibits a characteristic charging energy of approx. 3.5 meV. We investigate the homogeneity of the two graphene "tunnel" barriers connecting the single electron transistor to source and drain contacts as function of laterally applied electric fields, which are also used to electrostatically tune the overall device. Further, we focus on the barrier transparency as function of an applied perpendicular magnetic field and we find an increase of transparency for increasing magnetic field and a source-drain current saturation for magnetic fields exceeding 5 T.

An Acoustic Charge Transport Imager for High Definition Television Application

1992 ◽  
Author(s):  
William D. Hunt ◽  
Kevin F. Brennan ◽  
Abbas Torabi ◽  
Christopher J. Summers
Keyword(s):  
Charge Transport ◽  
High Definition ◽  
High Definition Television ◽  
Acoustic Charge Transport

scholarly journals Manipulating the Raman scattering rotation via magnetic field in an MoS2 monolayer

RSC Advances ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 4035-4041
Author(s):  
Yi Wan ◽  
Xing Cheng ◽  
Yanfang Li ◽  
Yaqian Wang ◽  
Yongping Du ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Raman Scattering ◽  
Perpendicular Magnetic Field ◽  
Mos2 Monolayer

Herein, we demonstrated that a perpendicular magnetic field could produce a dramatic scattering rotation for the vibrations in MoS2 monolayers.

scholarly journals Effects of Perpendicular Magnetic Field Annealing on the Structural and Magnetic Properties of [Co/Ni]2/PtMn Thin Films

2021 ◽  
Vol 7 (3) ◽  
pp. 38
Author(s):  
Roshni Yadav ◽  
Chun-Hsien Wu ◽  
I-Fen Huang ◽  
Xu Li ◽  
Te-Ho Wu ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Magnetic Properties ◽  
Photoelectron Spectroscopy ◽  
Perpendicular Magnetic Field ◽  
Face Centered Cubic ◽  
Lattice Image ◽  
X Ray ◽  
Field Annealing ◽  
Face Centered

In this study, [Co/Ni]2/PtMn thin films with different PtMn thicknesses (2.7 to 32.4 nm) were prepared on Si/SiO2 substrates. The post-deposition perpendicular magnetic field annealing (MFA) processes were carried out to modify the structures and magnetic properties. The MFA process also induced strong interlayer diffusion, rendering a less sharp interface between Co and Ni and PtMn layers. The transmission electron microscopy (TEM) lattice image analysis has shown that the films consisted of face-centered tetragonal (fct) PtMn (ordered by MFA), body-centered cubic (bcc) NiMn (due to intermixing), in addition to face-centered cubic (fcc) Co, Ni, and PtMn phases. The peak shift (2-theta from 39.9° to 40.3°) in X-ray diffraction spectra also confirmed the structural transition from fcc PtMn to fct PtMn after MFA, in agreement with those obtained by lattice images in TEM. The interdiffusion induced by MFA was also evidenced by the depth profile of X-ray photoelectron spectroscopy (XPS). Further, the magnetic properties measured by vibrating sample magnetometry (VSM) have shown an increased coercivity in MFA-treated samples. This is attributed to the presence of ordered fct PtMn, and NiMn phases exchange coupled to the ferromagnetic [Co/Ni]2 layers. The vertical shift (Mshift = −0.03 memu) of the hysteresis loops is ascribed to the pinned spins resulting from perpendicular MFA processes.

Dynamic resistance measurement in a YBCO wire under perpendicular magnetic field at various operating temperatures

2019 ◽  
Vol 126 (24) ◽  
pp. 243904 ◽  
Author(s):  
Yanchao Liu ◽  
Zhenan Jiang ◽  
G. Sidorov ◽  
C. W. Bumby ◽  
R. A. Badcock ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Resistance Measurement ◽  
Dynamic Resistance ◽  
Perpendicular Magnetic Field ◽  
Operating Temperatures
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