Nonadiabatic electron dynamics of single-electron transport in a perpendicular magnetic field

2014 ◽  
Vol 104 (17) ◽  
pp. 172110 ◽  
Author(s):  
JianHong He ◽  
Jie Gao ◽  
HuaZhong Guo
Keyword(s):  
Magnetic Field ◽  
Electron Transport ◽  
Single Electron ◽  
Perpendicular Magnetic Field ◽  
Electron Dynamics ◽  
Single Electron Transport

Single electron transport in samples containing InAs self-assembled dashes and dots

2000 ◽  
Vol 6 (1-4) ◽  
pp. 486-489
Author(s):  
S.I Khondaker ◽  
J.T Nicholls ◽  
W.R Tribe ◽  
D.A Ritchie ◽  
M Pepper
Keyword(s):  
Electron Transport ◽  
Single Electron ◽  
Single Electron Transport ◽  
Self Assembled

TRANSPARENCY OF NARROW CONSTRICTIONS IN A GRAPHENE SINGLE ELECTRON TRANSISTOR

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2647-2654 ◽  
Author(s):  
C. STAMPFER ◽  
E. SCHURTENBERGER ◽  
F. MOLITOR ◽  
J. GÜTTINGER ◽  
T. IHN ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electric Fields ◽  
Drain Current ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Perpendicular Magnetic Field ◽  
Current Saturation ◽  
Tunnel Barriers ◽  
Graphene Island ◽  
Charging Energy

We report on electronic transport experiments on a graphene single electron transistor as function of a perpendicular magnetic field. The device, which consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions is electronically characterized and the device exhibits a characteristic charging energy of approx. 3.5 meV. We investigate the homogeneity of the two graphene "tunnel" barriers connecting the single electron transistor to source and drain contacts as function of laterally applied electric fields, which are also used to electrostatically tune the overall device. Further, we focus on the barrier transparency as function of an applied perpendicular magnetic field and we find an increase of transparency for increasing magnetic field and a source-drain current saturation for magnetic fields exceeding 5 T.

scholarly journals Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy

Nanoscale ◽  
2015 ◽  
Vol 7 (36) ◽  
pp. 14822-14828 ◽  
Author(s):  
Dingxun Fan ◽  
Sen Li ◽  
N. Kang ◽  
Philippe Caroff ◽  
L. B. Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Transport ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Electron ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Dots ◽  
Single Electron Transport ◽  
Insb Nanowires

Single electron transport is demonstrated in high-quality MBE-grown InSb nanowire single quantum dots with a dot length up to ∼700 nm.

Observation of Single-Electron Transport in a Zn0.8Mg0.2O/ZnO Coaxial Heterostructure Nanorod

2008 ◽  
Vol 53 (9(2)) ◽  
pp. 962-966
Author(s):  
Dongchan Jeong ◽  
Dong-Keun Ki ◽  
Myung-Ho Bae ◽  
Hu-Jong Lee ◽  
Chul-Ho Lee ◽  
...  
Keyword(s):  
Electron Transport ◽  
Single Electron ◽  
Single Electron Transport ◽  
Coaxial Heterostructure
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