Spin gap, charge carriers, and low-temperature features of the behavior ofYb4As3

2000 ◽  
Vol 62 (18) ◽  
pp. 12175-12180 ◽  
Author(s):  
A. A. Zvyagin
Keyword(s):  
Low Temperature ◽  
Charge Carriers ◽  
Spin Gap

scholarly journals Performance of a MFS-based mosfet for low temperature applications

2005 ◽  
Vol 3 (01) ◽  
Author(s):  
P.J. Garcí­a-Ramí­rez ◽  
F. Sandoval-Ibarra
Keyword(s):  
Low Temperature ◽  
Magnetic Fields ◽  
Power Consumption ◽  
Wide Temperature Range ◽  
Carrier Mobility ◽  
Charge Carriers ◽  
Low Power Consumption ◽  
Current Line ◽  
Key Parameter ◽  
Very Low Temperature

A split-drain MAGFET has been designed for detecting magnetic fields at very low temperature. In this design a key parameter is the Hall angle, which indicates the current line deviation due to the Lorentz force acting on the charge carriers. It is well known that reducing the work temperature the carrier mobility increases, therefore an increase in carrier deflection is expected. As a consequence the split-drain MAGFET is able to detect magnetic fields below 1mT at 77K with low power consumption. Experimental results of a wide temperature range (20K< T

Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons

2020 ◽  
Vol 1004 ◽  
pp. 231-236
Author(s):  
Vitalii V. Kozlovski ◽  
Oleg Korolkov ◽  
Alexander A. Lebedev ◽  
Jana Toompuu ◽  
Natalja Sleptsuk
Keyword(s):  
Low Temperature ◽  
Conduction Band ◽  
Electron Irradiation ◽  
Proton Irradiation ◽  
Schottky Diodes ◽  
Differential Resistance ◽  
Charge Carriers ◽  
Low Temperature Annealing ◽  
Current Voltage ◽  
Comparative Results

The influence of low-temperature (up to 400°С) annealing on the current-voltage and capacitance–voltage characteristics of Schottky diodes irradiated with protons with an energy of 15 MeV compared with the results of annealing of structures after irradiation with electrons with an energy of 0.9 MeV has been studied. It was shown that in case of proton irradiation with a dose of 4E13 cm-2 and electron irradiation with a dose of 1E16 cm-2, only partial carrier compensation occurs and the differential resistance is completely determined by the number of carriers in the epitaxial layer. The irradiation method has almost no effect on the direct current dependence on the voltage in the exponential segment. The ideality coefficient remains almost unchanged within 1.03 ÷ 1.04. During annealing after proton irradiation, a large activation energy of the process is required. The temperature of the beginning of annealing process during proton irradiation shifts to a larger value, from 150 °C to 250 °C when compared with electron irradiation. It has been demonstrated that at low doses of proton irradiation, the low-temperature annealing leads to the return to the conduction band of up to 65% of the removed charge carriers. After electron irradiation, low-temperature annealing returns up to 90% of the removed charge carriers to the conduction band. This indicates that at room temperature both proton irradiation as well as electron irradiation introduce both stable and unstable defects but in different proportions.

Magnetic low-temperature specific heat of YBa2Cu3O7−δ due to localized charge carriers

1992 ◽  
Vol 204 (1-2) ◽  
pp. 161-170 ◽  
Author(s):  
Th. Schreiner ◽  
R. Ahrens ◽  
T. Wolf ◽  
H. Schmidt ◽  
H. Rietschel
Keyword(s):  
Low Temperature ◽  
Specific Heat ◽  
Charge Carriers ◽  
Low Temperature Specific Heat

Preparation, characterization, and low-temperature transition of (triazatetrabenzoporphyrinato)copper(I) iodide, a new porphyrinic conductor with local moments coupled to itinerant charge carriers

1989 ◽  
Vol 28 (20) ◽  
pp. 3889-3896 ◽  
Author(s):  
Kwangkyoung Liou ◽  
Michael Y. Ogawa ◽  
Timothy P. Newcomb ◽  
Guy Quirion ◽  
Moohee Lee ◽  
...  
Keyword(s):  
Low Temperature ◽  
Charge Carriers ◽  
Temperature Transition ◽  
Local Moments

Addition of Nb2O5 on the electrical properties of buried resistors in low-temperature cofired ceramics

2003 ◽  
Vol 18 (5) ◽  
pp. 1211-1218 ◽  
Author(s):  
Ching-Tai Cheng ◽  
Jiang-Tsair Lin ◽  
Hong-Ching Lin
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Ruthenium Oxide ◽  
Charge Carriers ◽  
Glass Layer ◽  
High Solubility ◽  
Temperature Coefficient Of Resistance ◽  
Thin Glass ◽  
Cofired Ceramics ◽  
Charging Energy

Nb2O5 was added to buried resistors for low-temperature cofired ceramics, and the electrical properties of the resultant resistors were examined. Remarkable increases in electrical resistivity and attractive decreases in the temperature coefficient of resistance (TCR) were observed by the addition of Nb2O5, which was attributed to the high solubility of Nb2O5 into the PbO-SiO2-Al2O3 matrix glass. With higher dissolved contents of Nb2O5 into the glass, the resistivity of buried resistors increased by approximately six-fold magnitude, while TCR decreased substantially toward zero. It was indicated that the conductance for these buried resistors was limited by tunneling of charge carriers through the thin glass layer penetrating into the ruthenium-oxide agglomerates. A larger separation observed between RuO2 particles due to high solubility of Nb2O5 in the glass increased the charging energy (E) and lump term (Rbo), which in turn gave rise to a higher resistivity and a lower TCR value.

scholarly journals Релаксация тока в монокристаллах TlGa-=SUB=-1-x-=/SUB=-Dy-=SUB=-x-=/SUB=-Se-=SUB=-2-=/SUB=- (x=0.01; 0.03)

2020 ◽  
Vol 62 (7) ◽  
pp. 1022
Author(s):  
С.Н. Мустафаева ◽  
К.М. Гусейнова ◽  
М.М. Асадов
Keyword(s):  
Low Temperature ◽  
Flight Time ◽  
Charge Carriers ◽  
Physical Parameters ◽  
Relaxation Processes ◽  
Carrier Injection ◽  
Contact Charging ◽  
Deep Traps ◽  
Effective Mobility ◽  
Temperature Relaxation

Abstract The low-temperature relaxation processes in TlGa_1 – _ x Dy_ x Se_2 ( x = 0.01, 0.03) single crystals have been studied experimentally. The physical parameters which characterize the electron processes in Ag–TlGa_1 – _ x Dy_ x Se_2–Ag samples have been determined using the estafette transfer mechanism of the charge formed at deep traps due to the carrier injection from a contact: the effective mobility of the charge transferred due to deep centers, the sample contact capacity, the region of accumulation of the charge in the samples, the contact charging constant, and the flight time of charge carriers through the sample.

Influence of Mn Site Substitution on Electrical Resistivity and Magnetoresistance Properties of Rare Earth Manganite

2014 ◽  
Vol 1047 ◽  
pp. 123-129 ◽  
Author(s):  
Tejas M. Tank ◽  
D. Bhargava ◽  
V. Sridharan ◽  
S.S. Samatham ◽  
V. Ganesan ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Low Temperature ◽  
Charge Carriers ◽  
Variable Range Hopping ◽  
Density Of State ◽  
Spin Dependent Scattering ◽  
Hopping Model ◽  
Variable Range Hopping Model ◽  
Sn Substitution ◽  
Localization Of Charge Carriers

We investigate the effects of Cr, Ru and Sn substitution on electrical resistivity and magnetoresistance property of polycrystalline samples La0.67Sr0.33Mn1-xBxO3(x = 0, 0.05; B= Ru, Cr and Sn) compounds. The value of M-I transition temperature (TP) decreases while resistivity increases with Cr, Ru and Sn substitution, moreover, the largest low-temperature magnetoresistance (MR %) is found at magnetic field dependent (Isotherm), which suggest that the spin-dependent scattering from internal grain regions is also responsible for the low-temperature MR %. Resistivity data have been fitted with the variable range hopping model to estimate the density of state at Fermi level. It was observed that the substitution of various transition metals in the Mn-site leads to a decrease in conductivity of the doped manganite samples, with conduction being controlled by the disorder induced localization of charge carriers.

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